scholarly journals Linac photon beam fine-tuning in PRIMO using the gamma-index analysis toolkit

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Angelina M. Bacala

Abstract Background In Monte Carlo simulations, the fine-tuning of linac beam parameters to produce a good match between simulated and measured dose profiles is a lengthy, time-consuming and resource-intensive process. The objective of this study is to utilize the results of the gamma-index analysis toolkit embedded inside the windows-based PRIMO software package to yield a truncated linac photon beam fine-tuning process. Methods Using PRIMO version 0.1.5.1307, a Varian Clinac 2100 is simulated at two nominal energy configurations of 6 MV and 10 MV for varying number of histories from 106 to more than 108. The dose is tallied on a homogeneous water phantom with dimensions 16.2 × 16.2 × 31.0 cm3 at a source-to-surface-distance of 100.0 cm. For each nominal energy setting, two initial electron beam energies are configured to reproduce the measured percent depth dose (PDD) distribution. Once the initial beam energy is fixed, several beam configurations are sequentially simulated to determine the parameters yielding good agreement with the measured lateral dose profiles. The simulated dose profiles are compared with the Varian Golden Beam Data Set (GBDS) using the gamma-index analysis method incorporating the dose-difference and distance-to-agreement criteria. The simulations are run on Pentium-type computers while the tuned 10 MV beam configuration is simulated at more than 108 histories using a virtual server in the Amazon.com Elastic Compute Cloud. Results The initial electron beam energy configuration that will likely reproduce the measured PDD is determined by comparing directly the gamma-index analysis results of two different beam configurations. The configuration is indicated to yield good agreement with data if the gamma-index passing rates using the 1%/1 mm criteria generally increase as the number of histories is increased. Additionally at the highest number of histories, the matching configuration gives a much higher passing rate at the 1%/1 mm acceptance criteria over the other competing configuration. With the matching initial electron beam energy known, this input to the subsequent simulations allows the fine-tuning of the lateral beam profiles to proceed at a fixed yet lower number of histories. In a three-stage serial optimization procedure, the first remaining beam parameter is varied and the highest passing rate at the 1%/1 mm criteria is determined. This optimum value is input to the second stage and the procedure is repeated until all the remaining beam parameters are optimized. The final tuned beam configuration is then simulated at much higher number of histories and the good agreement with the measured dose distributions is verified. Conclusions As physical nature is not stingy, it reveals at low statistics what is hidden at high statistics. In the matter of fine-tuning a linac to conform with measurements, this characteristic is exploited directly by the PRIMO software package. PRIMO is an automated, self-contained and full Monte Carlo linac simulator and dose calculator. It embeds the gamma-index analysis toolkit which can be used to determine all the parameters of the initial electron beam configuration at relatively lower number of histories before the full simulation is run at very high statistics. In running the full simulation, the Amazon.com compute cloud proves to be a very cost-effective and reliable platform. These results are significant because of the time required to run full-blown simulations especially for resource-deficient communities where there could just be one computer as their sole workhorse.

2018 ◽  
Vol 781 ◽  
pp. 82-87 ◽  
Author(s):  
Anton D. Teresov ◽  
Tamara Koval ◽  
Pavel Moskvin ◽  
Chan Mi Kim An ◽  
Nikolay Koval

The paper presents measurements taken with a high-speed infrared pyrometer for the surface temperature of VT1-0 titanium alloy during pulsed electron beam irradiation at different pulse energy densities. Also presented are numerical simulation data on thermal fields for the same conditions, showing a good agreement with the measurements. The results demonstrate that the heating rate of the VT1-0 surface depends on the main beam parameters, and its solidification occurs at a temperature ≈ 280 °C lower than the melting point.


2020 ◽  
Vol 27 (6) ◽  
pp. 1047-1070
Author(s):  
Milad Najafzadeh ◽  
Mojtaba Hoseini-Ghafarokhi ◽  
Rezgar Shahi Mayn Bolagh ◽  
Mohammad Haghparast ◽  
Shiva Zarifi ◽  
...  

2005 ◽  
Vol 32 (4) ◽  
pp. 1164-1175 ◽  
Author(s):  
Michael K. Fix ◽  
Paul J. Keall ◽  
Jeffrey V. Siebers

2005 ◽  
Vol 50 (24) ◽  
pp. 5935-5951 ◽  
Author(s):  
B De Smedt ◽  
N Reynaert ◽  
F Flachet ◽  
M Coghe ◽  
M G Thompson ◽  
...  

2004 ◽  
Vol 31 (4) ◽  
pp. 907-913 ◽  
Author(s):  
Antonis Tzedakis ◽  
John E. Damilakis ◽  
Michael Mazonakis ◽  
John Stratakis ◽  
Haralambos Varveris ◽  
...  

Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.


Author(s):  
D.P. Malta ◽  
M.L. Timmons

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.


1979 ◽  
Vol 40 (C7) ◽  
pp. C7-777-C7-778
Author(s):  
G. Fournier ◽  
J. Bonnet ◽  
J. Bridet ◽  
J. Fort ◽  
D. Pigache

2020 ◽  
Vol 62 (5) ◽  
pp. 055004 ◽  
Author(s):  
Guangyu Li ◽  
Quratul Ain ◽  
Song Li ◽  
Muhammad Saeed ◽  
Daniel Papp ◽  
...  

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