Characteristics of the Metal–Metal Oxide Reaction Matrix

2020 ◽  
pp. 31-73
Author(s):  
Anthony Peter Gordon Shaw
2021 ◽  
Vol 394 (10) ◽  
pp. 1991-2002
Author(s):  
Junchao Luo ◽  
Yin Zhang ◽  
Senbo Zhu ◽  
Yu Tong ◽  
Lichen Ji ◽  
...  

AbstractThe current understanding of osteoarthritis is developing from a mechanical disease caused by cartilage wear to a complex biological response involving inflammation, oxidative stress and other aspects. Nanoparticles are widely used in drug delivery due to its good stability in vivo and cell uptake efficiency. In addition to the above advantages, metal/metal oxide NPs, such as cerium oxide and manganese dioxide, can also simulate the activity of antioxidant enzymes and catalyze the degradation of superoxide anions and hydrogen peroxide. Degrading of metal/metal oxide nanoparticles releases metal ions, which may slow down the progression of osteoarthritis by inhibiting inflammation, promoting cartilage repair and inhibiting cartilage ossification. In present review, we focused on recent research works concerning osteoarthritis treating with metal/metal oxide nanoparticles, and introduced some potential nanoparticles that may have therapeutic effects.


2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Anh Thi Le ◽  
Swee-Yong Pung

Purpose This paper aims to investigate the reusability of metal/metal oxide-coupled ZnO nanorods (ZnO NRs) to degrade rhodamine B (RhB). Design/methodology/approach ZnO NRs particles were synthesized by precipitation method and used to remove various types of metal ions such as Cu2+, Ag+, Mn2+, Ni2+, Pb2+, Cd2+ and Cr2+ ions under UV illumination. The metal/metal oxide-coupled ZnO NRs were characterized by scanning electron microscope, X-ray diffraction and UV-Vis diffuse reflectance. The photodegradation of RhB dye by these metal/metal oxide-coupled ZnO NRs under UV exposure was assessed. Findings The metal/metal oxide-coupled ZnO NRs were successfully reused to remove RhB dye in which more than >90% of RhB dye was degraded under UV exposure. Furthermore, the coupling of Ag, CuO, MnO2, Cd and Ni particles onto the surface of ZnO NRs even enhanced the degradation of dye. The dominant reactive species involved in the degradation of RhB dye were •OH- and •O2−-free radicals. Research limitations/implications The coupling of metal/metal oxide onto the surface of ZnO NRs after metal ions removal could affect the photocatalytic performance of ZnO NRs in the degradation of organic pollutants in subsequent stage. Practical implications A good reusability performance of metal/metal oxide-coupled ZnO NRs make ZnO NRs become a desirable photocatalyst material for the treatment of wastewater, which consists of both heavy metal ions and organic dyes. Originality/value Metal/metal oxide coupling onto the surface of ZnO NRs particles improved subsequent UV-assisted photocatalytic degradation of RhB dye.


2003 ◽  
Vol 547 (1-2) ◽  
pp. L859-L864 ◽  
Author(s):  
R Lindsay ◽  
E Michelangeli ◽  
B.G Daniels ◽  
M Polcik ◽  
A Verdini ◽  
...  

2007 ◽  
Vol 111 (49) ◽  
pp. 12674-12678 ◽  
Author(s):  
Fabio Cicoira ◽  
Jill A. Miwa ◽  
Dmitrii F. Perepichka ◽  
Federico Rosei

Small ◽  
2018 ◽  
Vol 14 (44) ◽  
pp. 1870201 ◽  
Author(s):  
Ji-Soo Jang ◽  
Young-Woo Lim ◽  
Dong-Ha Kim ◽  
Daewon Lee ◽  
Won-Tae Koo ◽  
...  

2014 ◽  
Vol 117 ◽  
pp. 13-17 ◽  
Author(s):  
A. Soultati ◽  
D.G. Georgiadou ◽  
A. Douvas ◽  
P. Argitis ◽  
D. Alexandropoulos ◽  
...  

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.


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