Observation of the nucleation kinetics of Si quantum dots on SiO2 by EFTEM

Author(s):  
G Nicotra ◽  
S Lombardo ◽  
R Puglisi ◽  
C Spinella ◽  
G Ammendola ◽  
...  
2004 ◽  
Vol 95 (4) ◽  
pp. 2049-2055 ◽  
Author(s):  
G. Nicotra ◽  
R. A. Puglisi ◽  
S. Lombardo ◽  
C. Spinella ◽  
M. Vulpio ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2171
Author(s):  
Woosuk Lee ◽  
Changmin Lee ◽  
Boram Kim ◽  
Yonghyeok Choi ◽  
Heeyeop Chae

The development of blue-emissive InP quantum dots (QDs) still lags behind that of the red and green QDs because of the difficulty in controlling the reactivity of the small InP core. In this study, the reaction kinetics of the ZnS shell was controlled by varying the length of the hydrocarbon chain in alkanethiols for the synthesis of the small InP core. The reactive alkanethiol with a short hydrocarbon chain forms the ZnS shell rapidly and prevents the growth of the InP core, thus reducing the emission wavelength. In addition, the length of the hydrocarbon chain in the fatty acid was varied to reduce the nucleation kinetics of the core. The fatty acid with a long hydrocarbon chain exhibited a long emission wavelength as a result of the rapid nucleation and growth, due to the insufficient In–P–Zn complex by the steric effect. Blue-emissive InP/GaP/ZnS QDs were synthesized with hexanethiol and lauryl acid, exhibiting a photoluminescence (PL) peak of 485 nm with a full width at half-maximum of 52 nm and a photoluminescence quantum yield of 45%. The all-solution processed quantum dot light-emitting diodes were fabricated by employing the aforementioned blue-emissive QDs as an emitting layer, and the resulting device exhibited a peak luminance of 1045 cd/m2, a current efficiency of 3.6 cd/A, and an external quantum efficiency of 1.0%.


2004 ◽  
Vol 85 (9) ◽  
pp. 1586-1588 ◽  
Author(s):  
D. T. Tambe ◽  
V. B. Shenoy
Keyword(s):  

2010 ◽  
Vol 256 (16) ◽  
pp. 5116-5119 ◽  
Author(s):  
Yong-bin Chen ◽  
Yong Ren ◽  
Rong-ling Xiong ◽  
You-yuan Zhao ◽  
Ming Lu

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.


2017 ◽  
Vol 119 (17) ◽  
Author(s):  
X. Mi ◽  
Csaba G. Péterfalvi ◽  
Guido Burkard ◽  
J. R. Petta

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