Spontaneous recombination lifetime in compressively strained InGaAs and InGaP Quantum Well Lasers Grown on GaAs Substrates

2005 ◽  
pp. 127-130
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Recombination Lifetime ◽  
Spontaneous Recombination ◽  
Gaas Substrates

Performance improvement of 1.52 [micro sign]m (Ga,In)(N,As)∕GaAs quantum well lasers on GaAs substrates

2005 ◽  
Vol 41 (10) ◽  
pp. 595 ◽  
Author(s):  
M. Hugues ◽  
B. Damilano ◽  
J. Barjon ◽  
J.-Y. Duboz ◽  
J. Massies ◽  
...  
Keyword(s):  
Quantum Well ◽  
Performance Improvement ◽  
Quantum Well Lasers ◽  
Gaas Substrates

Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates

2000 ◽  
Vol 12 (7) ◽  
pp. 774-776 ◽  
Author(s):  
M. Yamada ◽  
T. Anan ◽  
K. Tokutome ◽  
A. Kamei ◽  
K. Nishi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Gaas Substrates ◽  
Low Threshold

Piezoelectric effects in InGaAs quantum well lasers grown on (111)B GaAs substrates

2001 ◽  
Author(s):  
Luis Borruel ◽  
Jose M. Ulloa ◽  
Jorge J. Sanchez ◽  
Beatriz Romero Herrero ◽  
Jiro Temmyo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Gaas Substrates ◽  
Piezoelectric Effects ◽  
Ingaas Quantum Well

Spontaneous recombination current in InGaAs/GaAs quantum well lasers

1990 ◽  
Vol 57 (15) ◽  
pp. 1482-1484 ◽  
Author(s):  
P. Blood ◽  
E. D. Fletcher ◽  
K. Woodbridge ◽  
M. Vening
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Spontaneous Recombination ◽  
Recombination Current
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