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Spontaneous recombination current in InGaAs/GaAs quantum well lasers
Applied Physics Letters
◽
10.1063/1.103370
◽
1990
◽
Vol 57
(15)
◽
pp. 1482-1484
◽
Cited By ~ 10
Author(s):
P. Blood
◽
E. D. Fletcher
◽
K. Woodbridge
◽
M. Vening
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Spontaneous Recombination
◽
Recombination Current
Download Full-text
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Cited By
References
Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers
International Conference on Indium Phosphide and Related Materials, 2005.
◽
10.1109/iciprm.2005.1517562
◽
2005
◽
Author(s):
W. Susaki
◽
S. Ukawa
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Recombination Lifetime
◽
Spontaneous Recombination
◽
Gaas Barrier
◽
Ingaas Quantum Well
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Spontaneous recombination lifetime in compressively strained InGaAs and InGaP Quantum Well Lasers Grown on GaAs Substrates
Compound Semiconductors 2004
◽
10.1201/9781482269222-30
◽
2005
◽
pp. 127-130
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Recombination Lifetime
◽
Spontaneous Recombination
◽
Gaas Substrates
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Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers
Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130)
◽
10.1109/islc.1998.734137
◽
2002
◽
Author(s):
T. Higashi
◽
S.J. Sweeney
◽
A.F. Phillips
◽
A.R. Adams
◽
E.P. O'Reilly
◽
...
Keyword(s):
Quantum Well
◽
Radiative Recombination
◽
Multiple Quantum Well
◽
Quantum Well Lasers
◽
Multiple Quantum
◽
Recombination Current
Download Full-text
Measurement and calculation of spontaneous recombination current and optical gain in GaAs‐AlGaAs quantum‐well structures
Journal of Applied Physics
◽
10.1063/1.349622
◽
1991
◽
Vol 70
(3)
◽
pp. 1144-1156
◽
Cited By ~ 85
Author(s):
P. Blood
◽
A. I. Kucharska
◽
J. P. Jacobs
◽
K. Griffiths
Keyword(s):
Quantum Well
◽
Optical Gain
◽
Quantum Well Structures
◽
Spontaneous Recombination
◽
Recombination Current
Download Full-text
Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers
International Conference on Indium Phosphide and Related Materials, 2005.
◽
10.1109/iciprm.2005.1517584
◽
2005
◽
Author(s):
W. Susaki
◽
S. Ukawa
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Recombination Lifetime
◽
Spontaneous Recombination
◽
Gaas Barrier
◽
Ingaas Quantum Well
Download Full-text
Excitonic and electron‐hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs‐GaAlAs multiple quantum well lasers at room temperature
Applied Physics Letters
◽
10.1063/1.97974
◽
1987
◽
Vol 50
(16)
◽
pp. 1074-1076
◽
Cited By ~ 40
Author(s):
E. H. Böttcher
◽
K. Ketterer
◽
D. Bimberg
◽
G. Weimann
◽
W. Schlapp
Keyword(s):
Quantum Well
◽
Recombination Rate
◽
Room Temperature
◽
Multiple Quantum Well
◽
Charge Carriers
◽
Quantum Well Lasers
◽
Multiple Quantum
◽
Electron Hole
◽
Spontaneous Recombination
Download Full-text
Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure
Applied Physics Letters
◽
10.1063/1.1566468
◽
2003
◽
Vol 82
(14)
◽
pp. 2335-2337
◽
Cited By ~ 8
Author(s):
S. R. Jin
◽
S. J. Sweeney
◽
S. Tomić
◽
A. R. Adams
◽
H. Riechert
Keyword(s):
High Pressure
◽
Quantum Well
◽
Auger Recombination
◽
Quantum Well Lasers
◽
Recombination Current
◽
Unusual Increase
Download Full-text
High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy
Journal de Physique III
◽
10.1051/jp3:1992208
◽
1992
◽
Vol 2
(9)
◽
pp. 1727-1738
◽
Cited By ~ 1
Author(s):
A. Accard
◽
F. Brillouet
◽
E. Duda
◽
B. Fernier
◽
G. Gelly
◽
...
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Well
◽
High Performance
◽
Molecular Beam
◽
Quantum Well Lasers
◽
Gas Source
◽
Semiconductor Quantum Well
Download Full-text
Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices.
10.21236/ada319314
◽
1996
◽
Author(s):
S. L. Chaung
Keyword(s):
Quantum Well
◽
Optoelectronic Devices
◽
Quantum Well Lasers
◽
Semiconductor Quantum Well
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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy
Electronics Letters
◽
10.1049/el:19880364
◽
1988
◽
Vol 24
(9)
◽
pp. 537
Author(s):
B. Saint-Cricq
◽
F. Chatenoud
◽
F. Lozes-Dupuy
◽
S. Fourtine
◽
H. Martinot
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Well
◽
Current Density
◽
Molecular Beam
◽
Threshold Current
◽
Threshold Current Density
◽
Quantum Well Lasers
◽
Single Quantum
◽
Single Quantum Well
◽
Low Threshold
Download Full-text
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