Threshold Gain

2017 ◽  
pp. 29-68
Author(s):  
Mark Steven Csele
Keyword(s):  
Threshold Gain

Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

2011 ◽  
Vol 36 (10) ◽  
pp. 1908 ◽  
Author(s):  
Peng-Hsiang Weng ◽  
Tzeng-Tsong Wu ◽  
Tien-Chang Lu ◽  
Shing-Chung Wang
Keyword(s):  
Photonic Crystal ◽  
Crystal Surface ◽  
Surface Emitting Lasers ◽  
Emitting Lasers ◽  
Threshold Gain

Threshold gain of coherently coupled aperiodic lattice Y lasers

2021 ◽  
Vol 46 (5) ◽  
pp. 1137
Author(s):  
Wei Jiang ◽  
Subhasish Chakraborty
Keyword(s):  
Threshold Gain

Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Bidnyk ◽  
T. J. Schmidt ◽  
B. D. Little ◽  
J. J. Song
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Electron Hole ◽  
Electron Hole Plasma ◽  
Narrow Emission ◽  
Threshold Gain ◽  
Near Threshold

ABSTRACTWe report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers and InGaN/GaN heterostructures at temperatures as high as 700 K. We show that the dominant near-threshold gain mechanism in GaN epilayers is inelastic excitonexciton scattering for temperatures below ∼ 150 K, characterized by band-filling phenomena and a relatively low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. The dominant mechanism for SE in InGaN epilayers and InGaN/GaN multiple quantum wells was found to be the recombination of carriers localized at potential fluctuations resulting from nonuniform indium incorporation. The SE spectra from InGaN epilayers and multiple quantum wells were comprised of extremely narrow emission lines and no spectral broadening of the lines was observed as the temperature was raised from 10 K to over 550 K. Based on the presented results, we suggest a method for significantly reducing the carrier densities needed to achieve population inversion in GaN, allowing for the development of GaNactive-medium laser diodes.

Low Threshold Gain-Narrowing Characteristics of Fluorescent Styrylbenzene Derivatives as a Guest Molecule in an Organic Thin-Film Optical Waveguide

2000 ◽  
Vol 29 (7) ◽  
pp. 754-755 ◽  
Author(s):  
Yasuaki Okumura ◽  
Michifumi Nagawa ◽  
Chihaya Adachi ◽  
Makoto Satsuki ◽  
Sadaharu Suga ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Waveguide ◽  
Guest Molecule ◽  
Organic Thin Film ◽  
Gain Narrowing ◽  
Low Threshold ◽  
Threshold Gain

Effect of varying threshold gain on second order intermodulation distortion in distributed feedback lasers

1990 ◽  
Vol 26 (20) ◽  
pp. 1720 ◽  
Author(s):  
H. Kawamura ◽  
K. Kamite ◽  
H. Yonetani ◽  
S. Ogita ◽  
H. Soda ◽  
...  
Keyword(s):  
Second Order ◽  
Distributed Feedback ◽  
Intermodulation Distortion ◽  
Distributed Feedback Lasers ◽  
Threshold Gain

The threshold gain behavior of random lasing in Kerr-type disordered medium

Optik ◽  
2015 ◽  
Vol 126 (23) ◽  
pp. 3868-3871
Author(s):  
Yong Liu
Keyword(s):  
Random Lasing ◽  
Disordered Medium ◽  
Threshold Gain
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