Coexistence of perpendicular and in-plane exchange bias using a single ferromagnetic layer in Pt/Co/Cr/CoO thin film

2016 ◽  
Vol 114 (1) ◽  
pp. 17008 ◽  
Author(s):  
Mustafa Öztürk ◽  
Erdem Demirci ◽  
Mustafa Erkovan ◽  
Osman Öztürk ◽  
Numan Akdoğan
2021 ◽  
Vol 7 (3) ◽  
pp. 36
Author(s):  
Yu Shiratsuchi ◽  
Yiran Tao ◽  
Kentaro Toyoki ◽  
Ryoichi Nakatani

Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state. The ME-controlled AFM domain state can be read out by the magnetization of the adjacent ferromagnetic layer coupled with the ME AFM layer via exchange bias. In this technique, the reduction in the ME layer thickness is an ongoing challenge. In this paper, we demonstrate the ME-induced switching of exchange bias polarity using the 30-nm thick ME Cr2O3 thin film. Two typical switching processes, the ME field cooling (MEFC) and isothermal modes, are both explored. The required ME field for the switching in the MEFC mode suggests that the ME susceptibility (α33) is not deteriorated at 30 nm thickness regime. The isothermal change of the exchange bias shows the hysteresis with respect to the electric field, and there is an asymmetry of the switching field depending on the switching direction. The quantitative analysis of this asymmetry yields α33 at 273 K of 3.7 ± 0.5 ps/m, which is comparable to the reported value for the bulk Cr2O3.


2021 ◽  
Vol 129 (1) ◽  
pp. 015305
Author(s):  
Andreea Tomita ◽  
Meike Reginka ◽  
Rico Huhnstock ◽  
Maximilian Merkel ◽  
Dennis Holzinger ◽  
...  
Keyword(s):  

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.


1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.


2020 ◽  
Vol 116 (2) ◽  
pp. 022412
Author(s):  
K. Liu ◽  
S. C. Ma ◽  
Z. S. Zhang ◽  
X. W. Zhao ◽  
B. Yang ◽  
...  

2020 ◽  
Vol 8 (34) ◽  
pp. 11704-11714
Author(s):  
You Jin Kim ◽  
Shinya Konishi ◽  
Yuichiro Hayasaka ◽  
Ryo Ota ◽  
Ryosuke Tomozawa ◽  
...  

Epitaxial TmFe2O4 thin film with self-assembled interface structure was grown on yttria-stabilized zirconia substrate. TmFe2O4 phase itself shows glassy behavior and the interface leads to the exchange bias effect.


2019 ◽  
Vol 5 (6) ◽  
pp. 1900296 ◽  
Author(s):  
Jonas Zehner ◽  
Rico Huhnstock ◽  
Steffen Oswald ◽  
Ulrike Wolff ◽  
Ivan Soldatov ◽  
...  

2004 ◽  
Vol 95 (11) ◽  
pp. 7519-7521
Author(s):  
E. Negusse ◽  
Y. U. Idzerda ◽  
P. A. Suci
Keyword(s):  

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