The electronic transport mechanism in indium molybdenum oxide thin films RF sputtered at room temperature

2012 ◽  
Vol 97 (3) ◽  
pp. 36002 ◽  
Author(s):  
Elangovan Elamurugu ◽  
Parthiban Shanmugam ◽  
Gonçalo Gonçalves ◽  
Nuno Franco ◽  
Eduardo Alves ◽  
...  
Keyword(s):  
Thin Films ◽  
Molybdenum Oxide ◽  
Electronic Transport ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Oxide Thin Films

Some studies on highly transparent wide band gap indium molybdenum oxide thin films rf sputtered at room temperature

2008 ◽  
Vol 516 (7) ◽  
pp. 1359-1364 ◽  
Author(s):  
E. Elangovan ◽  
A. Marques ◽  
A.S. Viana ◽  
R. Martins ◽  
E. Fortunato
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Molybdenum Oxide ◽  
Room Temperature ◽  
Wide Band ◽  
Oxide Thin Films ◽  
Wide Band Gap

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Charge Carrier ◽  
Vanadium Oxide ◽  
Transport Mechanism ◽  
Oxide Thin Films ◽  
Hopping Transport ◽  
Dc Sputtering ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films

scholarly journals DEPOSITION AND CHARACTERISATION OF SPUTTERED MOLYBDENUM OXIDE THIN FILMS WITH HYDROGEN ATMOSPHERE

2021 ◽  
pp. 150285
Author(s):  
Nicolau Lopez-Pinto ◽  
Thomas Tom ◽  
Joan Bertomeu ◽  
Jose Miguel Asensi ◽  
Eloi Ros ◽  
...  
Keyword(s):  
Thin Films ◽  
Molybdenum Oxide ◽  
Hydrogen Atmosphere ◽  
Oxide Thin Films

scholarly journals Sensing mechanism of an optimized room temperature optical hydrogen gas sensor made of zinc oxide thin films

2020 ◽  
Vol 9 (5) ◽  
pp. 10624-10634
Author(s):  
Siti Nor Aliffah Mustaffa ◽  
Nurul Assikin Ariffin ◽  
Ahmed Lateef Khalaf ◽  
Mohd. Hanif Yaacob ◽  
Nizam Tamchek ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Gas Sensor ◽  
Room Temperature ◽  
Hydrogen Gas ◽  
Oxide Thin Films ◽  
Sensing Mechanism

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Sign in / Sign up

Export Citation Format

Share Document