Proton irradiation and resistivity recovery in stages I & II of pure and carbon-doped Fe

Pure and C-doped Fe specimens were irradiated with 5 MeV protons at cryogenic temperature at the NCSR-"Demokritos" TANDEM accelerator in order to investigate the interactions between carbon atoms and radiation defects. During the subsequent post-irradiation isochronal annealing up to 180 K the defects start to migrate and interact either mutually or with the C impurities. The defect evolution is observed by in-situ electrical resistivity recovery measurements. Comparison of results from pure and C-doped Fe specimens reveals the effect of C solute atoms on the defect kinetics.

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Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.369 ◽

2013 ◽

Vol 740-742 ◽

pp. 369-372

Author(s):

Alexander M. Ivanov ◽

Alexander A. Lebedev ◽

V.V. Kozlovski

Keyword(s):

Silicon Carbide ◽

Proton Irradiation ◽

Defect Formation ◽

Radiation Defects ◽

Proton Scattering ◽

Silicon Carbide Film ◽

Low Energies ◽

Simulated Distribution ◽

Recoil Atoms ◽

Mev Protons

The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

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Measurement of Defect-induced Electrical Resistivity Change of Tungsten Wire at Cryogenic Temperature Using High-energy Proton Irradiation

Proceedings of the 14th International Workshop on Spallation Materials Technology ◽

10.7566/jpscp.28.061003 ◽

2020 ◽

Author(s):

Yosuke Iwamoto ◽

Makoto Yoshida ◽

Hiroki Matsuda ◽

Shin-ichiro Meigo ◽

Daiki Satoh ◽

...

Keyword(s):

Electrical Resistivity ◽

Tungsten Wire ◽

Cryogenic Temperature ◽

Proton Irradiation ◽

High Energy ◽

Resistivity Change ◽

High Energy Proton ◽

Energy Proton

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In-situ and post irradiation behavior of cryogenic temperature sensors under fast neutron fluence

10.1063/1.1472208 ◽

2002 ◽

Cited By ~ 3

Author(s):

Y. P. Filippov

Keyword(s):

Fast Neutron ◽

Cryogenic Temperature ◽

Neutron Fluence ◽

Temperature Sensors ◽

Post Irradiation ◽

Irradiation Behavior

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An upgrade of the materials irradiation facility with in-situ electrical resistivity measurement at the Demokritos TANDEM accelerator

HNPS Proceedings ◽

10.12681/hnps.1833 ◽

2019 ◽

Vol 26 ◽

pp. 251

Author(s):

A. Theodorou ◽

Z. Kotsina ◽

M. Axiotis ◽

G. Apostolopoulos

Keyword(s):

Electrical Resistivity ◽

Radiation Damage ◽

Research Evaluation ◽

Ion Beam ◽

Resistivity Measurement ◽

Electrical Resistivity Measurement ◽

Tandem Accelerator ◽

Fusion Materials ◽

Beam Currents

As an important part of fusion materials research, evaluation of radiation damage in fusion materials has been emphasized more than a half century. In order to improve our understanding of radiation damage in fusion materials, an upgrade has been performed of the materials irradiation facility IR2, which is located at the NCSR “Demokritos” 5.5 MV TANDEM accelerator. The upgraded facility allows irradiation at higher ion beam currents while ensuring that the target temperature remains below 10 K. It provides in-situ electrical resistivity measurements on several samples for real-time monitoring of radiation damage as well as in-situ post-irradiation annealing up to 300 K. The upgraded IR2 facility has been successfully employed in radiation damage and recovery studies of metallic materials with applications in fusion research.

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Comparison between In-Situ and Post-Irradiation Cyclic Deformation Structures in Ni by 150 MeV Proton Irradiation

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.md201305 ◽

2014 ◽

Vol 55 (3) ◽

pp. 434-437

Author(s):

Toshimasa Yoshiie ◽

Koichi Sato ◽

Qiu Xu ◽

Yoshihiro Ishi ◽

Tomonori Uesugi ◽

...

Keyword(s):

Cyclic Deformation ◽

Proton Irradiation ◽

Post Irradiation ◽

Deformation Structures

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Anisotropic Electrical Resistivity of YBCO/PBCO Superlattice Films Grown on Miscut Substrates

MRS Proceedings ◽

10.1557/proc-275-353 ◽

1992 ◽

Vol 275 ◽

Author(s):

H. R. Kerchner ◽

C. E. Klabunde ◽

D. K. Christen ◽

J. D. Budai ◽

D. H. Lowndes ◽

...

Keyword(s):

Electrical Resistivity ◽

Critical Temperature ◽

Laser Ablation ◽

Layer Thickness ◽

Cryogenic Temperature ◽

Vortex Pinning ◽

Twin Boundaries ◽

Large Step ◽

Electrical Resistivities

ABSTRACTAnisotropie electrical resistivity is studied in epitaxial superlattice films of YBa2Cu3O7-δ/PrBa2Cu3O7-ε grown in situ by laser ablation on SrTiO3 surfaces aligned slightly away from the [100] direction. Layer thicknesses of each compound range from two to eight atomic cells. Electrical resistivity of these superlattice films always shows a peak at some cryogenic temperature that decreases with increasing PrBa2Cu3O7-ε layer thickness. Clear evidence is seen of vortex pinning or of supercurrent blocking by the step edges or by twin boundaries. The ratio of electrical resistivities for current directions parallel and perpendicular to these boundaries shows a large step-like change just above the superconductive critical temperature. The possibility is discussed that the Kosterlitz-Thouless transition explains this anisotropy change.

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In-situ electrical-resistivity measurements in the high-voltage electron microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100107484 ◽

1978 ◽

Vol 36 (1) ◽

pp. 68-69

Author(s):

W. E. King

Keyword(s):

Electrical Resistivity ◽

Electron Microscope ◽

High Voltage ◽

Resistivity Measurements ◽

Voltage Electron ◽

High Voltage Electron Microscope ◽

High Voltage Electron ◽

Wide Range ◽

Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

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