Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 369-372
Author(s):  
Alexander M. Ivanov ◽  
Alexander A. Lebedev ◽  
V.V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Radiation Defects ◽  
Proton Scattering ◽  
Silicon Carbide Film ◽  
Low Energies ◽  
Simulated Distribution ◽  
Recoil Atoms ◽  
Mev Protons

The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation

2011 ◽  
Vol 45 (2) ◽  
pp. 141-144 ◽  
Author(s):  
A. M. Ivanov ◽  
V. V. Kozlovski ◽  
N. B. Strokan ◽  
A. A. Lebedev
Keyword(s):  
Silicon Carbide ◽  
Energy Distribution ◽  
Proton Irradiation ◽  
Radiation Defects ◽  
Recoil Atoms

Effect of 3C-SiC Irradiation with 8 MeV Protons

2017 ◽  
Vol 897 ◽  
pp. 311-314 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Boris Ya. Ber ◽  
Gagik A. Oganesyan ◽  
Sergey V. Belov ◽  
Natalia. V. Seredova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Initial Concentration ◽  
A Value ◽  
Full Compensation ◽  
Mev Protons

Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm-1. The full compensation of samples with an initial concentration of (1-2) x 1018 cm -3 was estimated to occur at doses of about 6 x 1015 cm -2. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.

RADIATION EFFECTS ON OPTICAL CHARACTERISTICS OF PbWO4

2008 ◽  
Vol 22 (21) ◽  
pp. 3695-3707 ◽  
Author(s):  
V. YEVSEYEV
Keyword(s):  
Optical Properties ◽  
Radiation Effects ◽  
Large Scale ◽  
Essential Role ◽  
Proton Irradiation ◽  
Defect Formation ◽  
High Energy ◽  
Radiation Defects ◽  
Lead Tungstate ◽  
High Energy Particles

The results of a study on the effect of γ- Co 60, fast (1 MeV) reactor neutron and 1 GeV proton irradiation on optical properties of lead tungstate ( PbWO 4) are presented. The peculiarities of optical absorption in PbWO 4 under these three types of irradiation are revealed. It is shown that in the case of irradiation of PbWO 4 with high energy particles 1 GeV protons, an essential role is played by large-scale radiation defects — disordered regions — and, related to it, fluctuating electrostatic potential. It is established that the efficiency of defect formation increases at the transition from gamma to neutron and further to proton irradiation.

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

2019 ◽  
Vol 963 ◽  
pp. 730-733
Author(s):  
Alexander A. Lebedev ◽  
Klavdya S. Davydovskaya ◽  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Radiation Defect ◽  
Room Temperature ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Removal Rate ◽  
Irradiation Temperature ◽  
Structural Defects ◽  
Radiation Defects

The influence of 15 MeV proton irradiation temperatures (room temperature (RT) - 700 ° C) on the processes of defect formation in commercially available 4H-SiC JBS structures has been studied. It has been shown that the carrier removal rate does not depend on the irradiation temperature. At the same time, the irradiation temperature affected on the spectrum of introduced radiation defects. The conclusion about the possible influence of SiC crystal lattice structural defects on the processes of radiation defect formation has been made.

scholarly journals Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 115 ◽  
Author(s):  
A.A. Lebedev ◽  
G.A. Oganesyan ◽  
V.V. Kozlovski ◽  
I.A. Eliseyev ◽  
P.V. Bulat
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Structural Defects ◽  
Radiation Defects ◽  
Photoluminescence Spectra ◽  
Radiation Induced ◽  
Cubic Silicon Carbide ◽  
Effect Method

The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.

scholarly journals Proton irradiation and resistivity recovery in stages I & II of pure and carbon-doped Fe

2020 ◽  
Vol 27 ◽  
pp. 148
Author(s):  
Andreas Theodorou ◽  
M. Syskaki ◽  
Z. Kotsina ◽  
M. Axiotis ◽  
G. Apostolopoulos
Keyword(s):  
Electrical Resistivity ◽  
Cryogenic Temperature ◽  
Proton Irradiation ◽  
Radiation Defects ◽  
Tandem Accelerator ◽  
Carbon Doped ◽  
Post Irradiation ◽  
Solute Atoms ◽  
Mev Protons

Pure and C-doped Fe specimens were irradiated with 5 MeV protons at cryogenic temperature at the NCSR-"Demokritos" TANDEM accelerator in order to investigate the interactions between carbon atoms and radiation defects. During the subsequent post-irradiation isochronal annealing up to 180 K the defects start to migrate and interact either mutually or with the C impurities. The defect evolution is observed by in-situ electrical resistivity recovery measurements. Comparison of results from pure and C-doped Fe specimens reveals the effect of C solute atoms on the defect kinetics.

scholarly journals Образование радиационных дефектов в слабо легированных слоях n- и p-SiC при торможении протонов

2018 ◽  
Vol 52 (3) ◽  
pp. 327
Author(s):  
В.В. Козловский ◽  
А.Э. Васильев ◽  
П.А. Карасев ◽  
А.А. Лебедев
Keyword(s):  
Experimental Data ◽  
Gas Phase ◽  
Frenkel Pair ◽  
Removal Rates ◽  
Displacement Cascades ◽  
Spontaneous Recombination ◽  
Low Energies ◽  
Pair Generation ◽  
Recoil Atoms ◽  
Mev Protons

AbstractMathematical simulation of the cascade of displacements in SiC is used to consider the specific features of Frenkel-pair generation upon the scattering of 8- and 15-MeV protons. The distribution histograms of energies acquired not only by primary knocked-out atoms, but also by recoil atoms generated in displacement cascades, are calculated. An analysis of the histograms considers two energy ranges. In the first range of “low” energies, the spontaneous recombination of genetically related Frenkel pairs is dominant. Recoil atoms in the second range have a higher energy, which enables these atoms to leave the spontaneousrecombination zone and dissociate into isolated components. The compensation of lightly doped n - and p -4 H -SiC samples grown by gas-phase epitaxy is experimentally studied under irradiation with 8- and 15-MeV protons. The carrier removal rates are measured. The calculated and experimental data are compared and estimates are obtained for the size of the spontaneous-recombination zone.

Proton irradiation creep of beta-silicon carbide

2011 ◽  
Vol 418 (1-3) ◽  
pp. 198-206 ◽  
Author(s):  
Vani Shankar ◽  
Gary S. Was
Keyword(s):  
Silicon Carbide ◽  
Proton Irradiation ◽  
Irradiation Creep
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