scholarly journals Electronic Properties of AlxGa1-xNyAs1-y Quaternary Semiconducting Alloys Lattice Matched to GaAs

2020 ◽  
Vol 137 (4) ◽  
pp. 489-492
Author(s):  
F. Fares ◽  
N. Bouarissa ◽  
N. El-Houda Fares ◽  
F. Mezrag
Keyword(s):  
Electronic Properties ◽  
Semiconducting Alloys ◽  
Lattice Matched

Theory of Semiconductor Heterojunctions

1982 ◽  
Vol 18 ◽  
Author(s):  
J. Pollmann ◽  
A. Mazur
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Properties ◽  
Short Review ◽  
Band Edge ◽  
Band Structures ◽  
Semiconductor Heterojunctions ◽  
Lattice Matched

A short review of characteristic electronic properties of heterojunction interfaces is given. Band edge discontinuities and interface band structures for lattice-matched junctions are discussed in detail. The examples presented include non-polar and polar junctions as well as overlayer systems. The results of involved calculations are interpreted in terms of simple physically appealing pictures by directly relating the changes in bonds across an interface to the resulting bands in the interface band structure. The meaning of the results for the transport properties of semiconductor heterojunctions is briefly assessed.

PRESSURE DEPENDENCE OF OPTO-ELECTRONIC PROPERTIES IN ZnSxSe1-x

2006 ◽  
Vol 20 (28) ◽  
pp. 4807-4820 ◽  
Author(s):  
F. BENMAKHLOUF ◽  
N. BOUARISSA
Keyword(s):  
Electronic Properties ◽  
Optical Constants ◽  
Alloy Composition ◽  
Electronic Devices ◽  
Pressure Coefficient ◽  
Virtual Crystal Approximation ◽  
High Frequency Dielectric Constant ◽  
Empirical Pseudopotential Method ◽  
Zinc Blende ◽  
Semiconducting Alloys

We present an investigation of the electronic properties and optical constants of zinc-blende ZnS x Se 1-x semiconducting alloys at normal and under hydrostatic pressure up to 20 kbar. For this purpose, we used an empirical pseudopotential method within the virtual crystal approximation. The effects of alloy composition are taken into consideration in the calculation, which improves significantly the bandgap bowing parameters with respect to the experiment. Results regarding the composition and pressure dependences of energy bandgaps, electron valence and conduction charge distributions, optical high-frequency dielectric constant and its linear pressure coefficient are presented and discussed. The information derived from the present study may be useful for the development of opto-electronic devices that operate in the blue/green spectral range.

The effect of back-melting on the continuity of crystallographic orientation and composition in HgZnTe

1992 ◽  
Vol 50 (2) ◽  
pp. 1696-1697
Author(s):  
H.J. Zuo ◽  
M.W. Price ◽  
R.D. Griffin ◽  
R.A. Andrews ◽  
G.M. Janowski
Keyword(s):  
Directional Solidification ◽  
Space Shuttle ◽  
Solidification Process ◽  
Space Experiment ◽  
Infrared Detection ◽  
Directionally Solidified ◽  
Crystallographic Defects ◽  
Semiconducting Alloys ◽  
Uniform Composition ◽  
Growth Experiments

The II-VI semiconducting alloys, such as mercury zinc telluride (MZT), have become the materials of choice for numerous infrared detection applications. However, compositional inhomogeneities and crystallographic imperfections adversly affect the performance of MZT infrared detectors. One source of imperfections in MZT is gravity-induced convection during directional solidification. Crystal growth experiments conducted in space should minimize gravity-induced convection and thereby the density of related crystallographic defects. The limited amount of time available during Space Shuttle experiments and the need for a sample of uniform composition requires the elimination of the initial composition transient which occurs in directionally solidified alloys. One method of eluding this initial transient involves directionally solidifying a portion of the sample and then quenching the remainder prior to the space experiment. During the space experiment, the MZT sample is back-melted to exactly the point at which directional solidification was stopped on earth. The directional solidification process then continues.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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