scholarly journals Design of a Bandgap Voltage Reference Working in Subthreshold Region with Low Voltage, High Precision in a Wide Temperature Range

2018 ◽  
Author(s):  
JING-XING DAI ◽  
FU-HUA LI ◽  
JING-HUI AN ◽  
YAN ZHOU ◽  
CHEN-JIAN WU
Keyword(s):  
High Precision ◽  
Wide Temperature Range ◽  
Low Voltage ◽  
Voltage Reference ◽  
Subthreshold Region ◽  
Temperature Range ◽  
Bandgap Voltage Reference

scholarly journals A high precision bandgap voltage reference

2018 ◽  
Vol 232 ◽  
pp. 04072
Author(s):  
XingGuo Tian ◽  
XiaoNing Xin ◽  
DongYang Han
Keyword(s):  
Low Temperature ◽  
Temperature Coefficient ◽  
High Precision ◽  
Wide Temperature Range ◽  
Supply Voltage ◽  
Market Demand ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Range ◽  
Bandgap Voltage Reference

In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient. In this paper, the basic implementation principle of the bandgap reference is analyzed.On the basis of the traditional bandgap reference circuit structure,this design adds a trimming network and a temperature compensation network. A new Gaussian bell curve compensation technique is adopted to compensate the low temperature section, and the normal temperature section and the high temperature section respectively. Compared with the existing compensation technology, the versatility and the compensation effect is better. The designed circuit is designed and manufactured based on the Huahong HHNECGE0.35um process. The results show that the output voltage is 2.5V at 2.7V supply voltage and temperature range of -40-125°C.at typical process angle ,the temperature coefficient is 0.54618 PPm/°C,and is within 1PPm/°C at other process angles.

DESIGN OF A CMOS BANDGAP REFERENCE CIRCUIT WITH A WIDE TEMPERATURE RANGE, HIGH PRECISION AND LOW TEMPERATURE COEFFICIENT

2014 ◽  
Vol 23 (08) ◽  
pp. 1450107 ◽  
Author(s):  
JUN-DA CHEN ◽  
CHENG-KAI YE
Keyword(s):  
Temperature Coefficient ◽  
High Precision ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Range ◽  
Wide Range ◽  
Bandgap Voltage Reference ◽  
Reference Circuit ◽  
Cmos Voltage Reference

This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.

A High-Precision Bandgap Voltage Reference with Automatic Curvature-Compensation Technique

2019 ◽  
Vol 28 (13) ◽  
pp. 1950214
Author(s):  
Ze-kun Zhou ◽  
Hongming Yu ◽  
Yue Shi ◽  
Zhuo Wang ◽  
Bo Zhang
Keyword(s):  
Temperature Coefficient ◽  
High Precision ◽  
Power Supply ◽  
Supply Voltage ◽  
Adaptive Signal Processing ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Temperature Range ◽  
Bandgap Voltage Reference ◽  
Compensation Technique

A high-precision bandgap voltage reference (BGR) with a novel curvature-compensation scheme is proposed in this paper. The temperature coefficient (TC) can be automatically optimized with a built-in adaptive curvature-compensation technique, which is realized in a digitization control way. An exponential curvature-compensation method is first adopted to reduce the TC in a certain degree, especially in low temperature range. Then, the temperature drift of BGR in higher temperature range can be further minimized by dynamic zero-temperature-coefficient point tracking (ZTCPT) with temperature changes. With the help of proposed adaptive signal processing, the output voltage of BGR can approximately maintain zero TC in a wider temperature range. Verification results of the BGR proposed in this paper, which is implemented in 0.35-[Formula: see text]m BiCMOS process, illustrate that the TC of 1.4[Formula: see text]ppm/∘C is realized under the power supply voltage of 3[Formula: see text]V and the power supply rejection of the proposed circuit is [Formula: see text][Formula: see text]dB without any filter capacitor.

Design of Ultra Low Noise High Precision Bandgap Voltage Reference

2021 ◽  
Author(s):  
Siddhi Warang ◽  
Mark Gracious ◽  
Siddhi More ◽  
Mangeshi Patil ◽  
Sudhakar S. Mande
Keyword(s):  
High Precision ◽  
Low Noise ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Ultra Low Noise

Integrated Bandgap Voltage Reference for High Voltage Vehicle Applications

2015 ◽  
Vol 24 (08) ◽  
pp. 1550125 ◽  
Author(s):  
Sergio Saponara
Keyword(s):  
High Voltage ◽  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Power Supply Rejection Ratio ◽  
Compact Size ◽  
Electrical Vehicles ◽  
Bandgap Voltage Reference

This work presents a bandgap voltage reference (BGR) integrated in 0.25-μm bipolar-CMOS-DMOS (BCD) technology. The BGR circuit generates a reference voltage of 1.22 V. It is able to withstand large supply voltage variations of vehicle applications from 4.5 V, e.g., in case of cranking, up to 60-V, maximum value in case of emerging 48-V battery systems for hybrid and electrical vehicles. The circuit has an embedded high-voltage (HV) pseudo-regulator block that provides a more stable internal supply rail for a cascaded low-voltage bandgap core. HV MOS are used only in the pre-regulator block thus allowing the design of a BGR with compact size. The proposed architecture permits to withstand large input voltage variations with a temperature drift of a hundred of ppm/°C, a line regulation (LR) of few mV/V versus the external supply voltage and a power supply rejection ratio (PSRR) higher than 90 dB.

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