Evaluation of Stable Structure and Internal Stress of Gold Nanowire by Molecular Dynamics

2003 ◽  
Vol 2003.6 (0) ◽  
pp. 55-56
Author(s):  
Kenichi SAITOH ◽  
Noboru SHINKE ◽  
Noriyuki TSUJIMURA
2019 ◽  
Vol 1 ◽  
pp. 100013 ◽  
Author(s):  
Xin Li ◽  
Weiying Song ◽  
Morten M. Smedskjaer ◽  
John C. Mauro ◽  
Mathieu Bauchy

1997 ◽  
Vol 505 ◽  
Author(s):  
Y. Kogure ◽  
M. Doyama

ABSTRACTA molecular dynamics simulation of amorphous SiO2 thin films has been made to investigate the structure and internal stress. The atomic configuration of the amorphous structure is investigated through the radial distribution function and the distribution of Si-O-Si bond angles. Distribution of internal stress through the specimen is evaluated from the volume and the shape of the SiO4 tetrahedron, which is the elementally unit of amorphous SiO2.


2009 ◽  
Vol 373 (38) ◽  
pp. 3454-3458 ◽  
Author(s):  
Yang Zhang ◽  
Yu-Hua Wen ◽  
Jin-Cheng Zheng ◽  
Zi-Zhong Zhu

2013 ◽  
Vol 481 ◽  
pp. 49-54
Author(s):  
Jia Lin Tsai ◽  
Cheng Fong Hong

This study aims to investigate the mechanical properties of gold nanowires using molecular dynamics (MD) simulation. The effects of the cross section size and the defects on the stress strain curves of the nanowires are examined. Moreover, the inception as well as the processing of dislocationin the nanowire is accounted by means of the centro-symmetry parameter and meanwhile, the energy variation during the dislocation is calculated. Results indicated for the pristine gold nanowire, as the cross section size increases, Youngs modulus increases, but the yielding stress decreases accordingly. Once the ultimate linear point is attained, the dislocation takes place abruptly from the nanowire surfaceand extended along the {111} planes. On the other hand, for the nanowire with defect, it was found that the dislocation is initiated from the defect which can significantlyreduce the yielding stress of the nanowires.


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