Effect of Sputtering Gas Pressure and Bias Voltage on Mechanical Properties of TiN Film Deposited by D. C. Magnetron Sputtering

2003 ◽  
Vol 2003 (0) ◽  
pp. 447-448
Author(s):  
Hirotaka TANABE ◽  
Yoshio MIYOSHI ◽  
Tohru TAKAMATSU ◽  
Hitoshi AWANO
2003 ◽  
Vol 2003.78 (0) ◽  
pp. _2-1_-_2-2_
Author(s):  
Hirotaka TANABE ◽  
Yoshio MIYOSHI ◽  
Tohru TAKAMATSU ◽  
Hitoshi AWANO

Author(s):  
Hirotaka Tanabe ◽  
Yoshio Miyoshi ◽  
Tohru Takamatsu ◽  
Hitoshi Awano ◽  
Takaaki Yamano

The mechanical properties of TiN films deposited on carbon steel JIS S45C by reactive dc magnetron sputtering under three sputtering gas pressures, 0.5Pa, 0.8Pa, and 1.76Pa were investigated. The residual stress once increased and then decreased with increasing bias voltage at 0.5Pa and 0.8Pa, but increased monotonously at 1.76Pa. These variations could be explained by the variations of the bombarding energy of a sputtered ion at each gas pressure. The variations of hardness and toughness correlated with the variation of residual stress. The variation of adhesive strength also could be explained by the variation of the bombarding energy with a model proposed in this study. A specific wear rate was also investigated, and it was found that to increase not only the hardness but also the adhesive strength is necessary to improve the wear resistance of TiN films.


2011 ◽  
Vol 189-193 ◽  
pp. 901-905
Author(s):  
Chang Wei Zou ◽  
Jun Zhang ◽  
Wei Xie ◽  
Le Xi Shao

CrN films with deposition rates of 30-190 nm/min were deposited on Si (111) substrates by middle-frequency magnetron sputtering methods. XRD, SEM, EDS and microhardness tests were used to investigate the effects of bias voltages and total gas pressure on the structure and mechanical properties of the resulting CrN films. With the increasing of bias voltages and total gas pressure, the preferential diffraction orientation changed from (111) to (200). A smooth surface was observed by the SEM experiments and the thickness of the film was about 2 µm. The deposition rates and Cr content of resulting films were highly influenced by the magnitude of the bias voltage and total gas pressure. RMS and Ra properties of the CrN films increased when increased total gas pressure or decreased bias voltage. CrN films produced under optimal conditions have an almost 1:1 Cr:N ratio as determined by EDS. The hardness of the CrN film increased from 2200 to 2700 HV when increased the bias voltages from 0 to 200 V.


2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.


2009 ◽  
Vol 11 (1) ◽  
pp. 38-41 ◽  
Author(s):  
Rong Shuangquan ◽  
He Jun ◽  
Wang Hongjun ◽  
Tian Canxin ◽  
Guo Liping ◽  
...  

2005 ◽  
Vol 297-300 ◽  
pp. 1713-1717 ◽  
Author(s):  
Xun Cai ◽  
Youming Liu ◽  
Liuhe Li ◽  
Qiu Long Chen ◽  
Ya Wei Hu

The effect of a AlN gradient interlayer on the surface mechanical properties was investigated by nano-indentation for the TiN film on N+-implanted Al substrate. The AlN interlayer, 80nm thick measured by Auger Electron Spectrometer (AES), was formed by high energy N+-implantation prior to magnetron sputtering the TiN film in our custom designed multifunctional ion implanter. The nanohardness of N+-implanted aluminum was 450HV at extremely small depth, but quickly decreased to a constant value (65HV). The hardness and Young’s modulus of the TiN film on two different substrates, one with and the other without N+-implantation, kept almost constant up to a small depth of 200nm, and then decreased to the values of the Al substrate with increasing indentation depth, but with a lower decreasing rate for the N+-implanted system. It was found from the load-displacement curves that the interfaces cracked when the indentation load was 38mN for the N+-implanted system, while 18mN for the unimplanted system. Therefore the N+- implantation improved the surface mechanical properties significantly.


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