Effects of High Temperature Pulsed Helium Implantation on Tungsten Surface Morphology

2007 ◽  
Vol 52 (3) ◽  
pp. 544-548 ◽  
Author(s):  
Ross Radel ◽  
Gerald Kulcinski
2002 ◽  
Vol 20 (6) ◽  
pp. 2072
Author(s):  
Meiyong Liao ◽  
Chunlin Chai ◽  
Shaoyan Yang ◽  
Zhikai Liu ◽  
Fuguang Qin ◽  
...  

2007 ◽  
Vol 82 (15-24) ◽  
pp. 1904-1910 ◽  
Author(s):  
Y. Ueda ◽  
M. Toda ◽  
M. Nishikawa ◽  
K. Kondo ◽  
K.A. Tanaka

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 332 ◽  
Author(s):  
Wen Ge ◽  
Taisong He ◽  
Meijiao Wang ◽  
Jiamei Li

Functional gradient materials (FGM) have many excellent properties, and high-performance gradient coating exhibits good prospective application. In this paper, the nano-grain Ni/ZrO2 gradient coating was prepared by double pulse electrodeposition (BP). The surface morphology, crystal structure and electrochemical corrosion resistance of the nano-grain Ni/ZrO2 coating and Ni coating, annealed at different temperatures (400–800 °C), have been compared. In the vertical direction to the substrate surface, the content of ZrO2 increases from 0% to 34.99%. X-ray diffraction (XRD) revealed that the average crystal size of Ni/ZrO2 gradient coating gradually increases from 13.75 to 27.75 nm, and the crystal structure is a face-centered cubic (FCC). The main crystal orientation faces are (111) and (200), while the (200) face exhibited a stronger preferred orientation. Compared with the Ni coating by scanning electron microscopy, the surface morphology of double pulse fabricated Ni/ZrO2 gradient coating was revealed as being smoother, denser, and having fewer pores, and the crystal particle size distribution became narrow. X-ray photoelectron spectroscopy (XPS) shows that the chemical binding states of elements Ni and Zr have been altered. The binding energies of 2p3/2 and 2p1/2 for Ni have been increased, resulting in a higher electron donor state of Ni. The binding energy of 3d5/2 and 3d3/2 of Zr4+ in ZrO2 is decreased, thus becoming better electron acceptors. Chemical bonding has been formed at the Ni/ZrO2 interface. This study demonstrated that double pulse electrodeposition is a promising fabrication method for functional gradient coatings for high temperature applications.


2020 ◽  
Vol 22 ◽  
pp. 100730 ◽  
Author(s):  
Chun-Shang Wong ◽  
Josh A. Whaley ◽  
Takuro Wada ◽  
Sakumi Harayama ◽  
Yasuhisa Oya ◽  
...  

2008 ◽  
Vol 600-603 ◽  
pp. 183-186 ◽  
Author(s):  
Kenneth A. Jones ◽  
T.S. Zheleva ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad ◽  
M. Ervin ◽  
...  

At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000°C, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures.


2013 ◽  
Vol 684 ◽  
pp. 312-316 ◽  
Author(s):  
Sheng Po Chang

We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier


1996 ◽  
Vol 69 (9) ◽  
pp. 1306-1308 ◽  
Author(s):  
Hsiung Chou ◽  
H. Z. Chen ◽  
Y. C. Chen ◽  
T. L. Lin ◽  
T. C. Chow ◽  
...  

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