Amorphous silicon and amorphous silicon nitride films prepared by a plasma-enhanced chemical vapor deposition process as optical coating materials

ABSTRACTWe present a comparison of the properties of films of amorphous silicon nitride, amorphous silicon oxynitride, and amorphous fluorinated silicon nitride deposited by plasma enhanced chemical vapor deposition. The properties of fluorinated silicon nitride films degrade when exposed to air. TFT devices fabricated with silicon nitride and silicon oxynitride insulators show thteshold voltages ≤3 V and source drain current ON/OFF ratios exceeding 107 for gate voltages smaller than 20 V, whereas TFTs with fluorinated silicon nitride insulators show an inferior performance. We also present ideas on the possible relation between the stress in the insulator film and the reliability of TFTs fabricated using these layers.

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Effects of various substrate materials on structural and optical properties of amorphous silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition

Chinese Optics Letters ◽

10.3788/col202018.083101 ◽

2020 ◽

Vol 18 (8) ◽

pp. 083101

Author(s):

Liangyi Hang ◽

Weiguo Liu ◽

Junqi Xu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Structural And Optical Properties ◽

Amorphous Silicon Nitride

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Amorphous silicon nitride deposited by hot-wire chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.1775046 ◽

2004 ◽

Vol 96 (5) ◽

pp. 2973-2979 ◽

Cited By ~ 20

Author(s):

Fengzhen Liu ◽

Scott Ward ◽

Lynn Gedvilas ◽

Brian Keyes ◽

Bob To ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Amorphous Silicon Nitride

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Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

MRS Proceedings ◽

10.1557/proc-508-151 ◽

1998 ◽

Vol 508 ◽

Author(s):

A. Izumi ◽

T. Ichise ◽

H. Matsumura

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Chemical Vapor ◽

State Density ◽

Gate Insulator ◽

Catalytic Chemical Vapor Deposition ◽

Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽

10.3390/mi12040354 ◽

2021 ◽

Vol 12 (4) ◽

pp. 354

Author(s):

Qianqian Liu ◽

Xiaoxuan Chen ◽

Hongliang Li ◽

Yanqing Guo ◽

Jie Song ◽

...

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Thermal Annealing ◽

Chemical Vapor ◽

Peak Position ◽

Excitation Wavelength ◽

Very High Frequency ◽

Amorphous Silicon Nitride ◽

Silicon Nitride Films ◽

High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

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