scholarly journals Laser light scattering in turbid media Part II: Spatial and temporal analysis of individual scattering orders via Monte Carlo simulation

2009 ◽  
Vol 17 (16) ◽  
pp. 13792 ◽  
Author(s):  
Edouard Berrocal ◽  
David L. Sedarsky ◽  
Megan E. Paciaroni ◽  
Igor V. Meglinski ◽  
Mark A. Linne
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Light Scattering ◽  
Laser Light ◽  
Temporal Analysis ◽  
Laser Light Scattering ◽  
Turbid Media ◽  
Spatial And Temporal Analysis

scholarly journals Laser light scattering in turbid media Part I: Experimental and simulated results for the spatial intensity distribution

2007 ◽  
Vol 15 (17) ◽  
pp. 10649 ◽  
Author(s):  
Edouard Berrocal ◽  
David L. Sedarsky ◽  
Megan E. Paciaroni ◽  
Igor V. Meglinski ◽  
Mark A. Linne
Keyword(s):  
Light Scattering ◽  
Intensity Distribution ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Turbid Media ◽  
Spatial Intensity Distribution ◽  
Spatial Intensity

Determination of optical properties of slices of turbid media by diffuse CW laser light scattering profilometry

2007 ◽  
Vol 105 (1) ◽  
pp. 68-83 ◽  
Author(s):  
H.O. Di Rocco ◽  
D.I. Iriarte ◽  
J.A. Pomarico ◽  
H.F. Ranea Sandoval ◽  
R. Macdonald ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Scattering ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Turbid Media ◽  
Cw Laser

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

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