scholarly journals Semiconductor periodic structures for out-of-plane optical switching and Bragg-soliton excitation

1998 ◽  
Vol 3 (11) ◽  
pp. 433 ◽  
Author(s):  
Thomas Brown ◽  
R. Fabrizzio ◽  
S. Weiss
1994 ◽  
Vol 374 ◽  
Author(s):  
Sanford A. Asher ◽  
Song-Yuan Chang ◽  
Albert Tse ◽  
Lei Liu ◽  
Guisheng Pan ◽  
...  

The development of optical technologies requires the fabrication of reliable optical switching and limiting devices. Optical switches modulate the transmission or reflection of incident light, while optical limiters serve to limit transmission to prevent the transmitted light intensity from exceeding a defined level. A major application of optical limiters is to protect delicate sensors.


1994 ◽  
Vol 19 (21) ◽  
pp. 1789 ◽  
Author(s):  
Stojan Radic ◽  
Nicholas George ◽  
Govind P. Agrawal

2006 ◽  
Vol 14 (7) ◽  
pp. 2839 ◽  
Author(s):  
Andrey E. Miroshnichenko ◽  
Igor Pinkevych ◽  
Yuri S. Kivshar

Author(s):  
G.A. Bertero ◽  
R. Sinclair

Pt/Co multilayers displaying perpendicular (out-of-plane) magnetic anisotropy and 100% perpendicular remanent magnetization are strong candidates as magnetic media for the next generation of magneto-optic recording devices. The magnetic coercivity, Hc, and uniaxial anisotropy energy, Ku, are two important materials parameters, among others, in the quest to achieving higher recording densities with acceptable signal to noise ratios (SNR). The relationship between Ku and Hc in these films is not a simple one since features such as grain boundaries, for example, can have a strong influence on Hc but affect Ku only in a secondary manner. In this regard grain boundary separation provides a way to minimize the grain-to-grain magnetic coupling which is known to result in larger coercivities and improved SNR as has been discussed extensively in the literature for conventional longitudinal recording media.We present here results from the deposition of two Pt/Co/Tb multilayers (A and B) which show significant differences in their coercive fields.


Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.


Sign in / Sign up

Export Citation Format

Share Document