Thermal stability of wavefront shaping using a DMD as a spatial light modulator

By manipulating the phase map of a wavefront of light using a spatial light modulator, the scattered light can be sharply focused on a specific target. Several iterative optimization algorithms for obtaining the optimum phase map have been explored. However, there has not been a comparative study on the performance of these algorithms. In this paper, six optimization algorithms for wavefront shaping including continuous sequential, partitioning algorithm, transmission matrix estimation method, particle swarm optimization, genetic algorithm (GA), and simulated annealing (SA) are discussed and compared based on their efficiency when introduced with various measurement noise levels.

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Wavefront shaping assisted design of spectral splitters and solar concentrators

Scientific Reports ◽

10.1038/s41598-021-82110-w ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Berk N. Gün ◽

Emre Yüce

Keyword(s):

Experimental Method ◽

Spatial Light Modulator ◽

Large Scale ◽

Low Cost ◽

Optical Element ◽

Light Modulator ◽

Solar Concentrators ◽

Spectral Splitting ◽

Wavefront Shaping ◽

First Time

AbstractSpectral splitters, as well as solar concentrators, are commonly designed and optimized using numerical methods. Here, we present an experimental method to spectrally split and concentrate broadband light (420–875 nm) via wavefront shaping. We manage to spatially control white light using a phase-only spatial light modulator. As a result, we are able to split and concentrate three frequency bands, namely red (560–875 nm), green (425–620 nm), and blue (420–535 nm), to two target spots with a total enhancement factor of 715%. Despite the significant overlap between the color channels, we obtain spectral splitting ratios as 52%, 57%, and 66% for red, green, and blue channels, respectively. We show that a higher number of adjustable superpixels ensures higher spectral splitting and concentration. We provide the methods to convert an optimized phase pattern into a diffractive optical element that can be fabricated at large scale and low cost. The experimental method that we introduce, for the first time, enables the optimization and design of SpliCons, which is $$\sim 300$$ ∼ 300 times faster compared to the computational methods.

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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