scholarly journals Helicity-dependent continuous varifocal metalens based on bilayer dielectric metasurfaces

2021 ◽  
Author(s):  
Yanqun Wang ◽  
Li Chen ◽  
Shi-Wei Tang ◽  
Peipeng Xu ◽  
Fei Ding ◽  
...  
Keyword(s):  
Bilayer Dielectric

Orientational Disorder in Chiral Bilayer Dielectric Metasurfaces

2021 ◽  
Author(s):  
Katsuya Tanaka ◽  
Aso Rahimzadegan ◽  
Dennis Arslan ◽  
Stefan Fasold ◽  
Michael Steinert ◽  
...  
Keyword(s):  
Orientational Disorder ◽  
Bilayer Dielectric

Effect of thickness of bilayer dielectric on 1,7-dibromo-N,N′-dioctadecyl -3,4,9,10-perylenetetracarboxylic diimide based organic field-effect transistors

2014 ◽  
Vol 211 (10) ◽  
pp. 2403-2411 ◽  
Author(s):  
Nimmakayala V. V. Subbarao ◽  
Murali Gedda ◽  
Suresh Vasimalla ◽  
Parameswar K. Iyer ◽  
Dipak K. Goswami
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Bilayer Dielectric

scholarly journals Solution Processed Low Voltage Metal-Oxide transistor by using TiO2 /Li-Al2O3 stacked Gate Dielectric

2021 ◽  
Author(s):  
Nila Pal ◽  
Utkarsh Pandey ◽  
Sajal Biring ◽  
Bhola Nath Pal
Keyword(s):  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Single Layer ◽  
Device Performance ◽  
Operating Voltage ◽  
Semiconductor Interface ◽  
Solution Processed ◽  
Bilayer Dielectric ◽  
Effective Carrier

Abstract A solution processed top-contact bottom gated SnO2 thin-film transistor (TFT) has been fabricated by using a TiO2/ Li-Al2O3 bilayer stacked gate dielectric that show operating voltage of this TFT within 2.0 V. It is observed that the bilayer dielectric has much higher areal capacitance with lower leakage current density that significantly improve the overall device performance of TFT. The TFT with bilayer gate dielectric shows an effective carrier mobility (µsat) of 9.2 cm2V− 1s− 1 with an on/off ratio of 7.1x103 which are significantly higher with respect to the TFT with a single layer Li-Al2O3 gate dielectric. The origin of this improvement is due to the Schottky junction between the highly doped silicon (p++-Si) and TiO2 of bilayer stacked dielectric that induced electrons to the channel which reduces the dielectric/semiconductor interface trap state. This investigation opens a new path to develop TFT device performance using a suitable bilayer stack of gate-dielectric.

Low‐Power, Flexible Nonvolatile Organic Transistor Memory Based on an Ultrathin Bilayer Dielectric Stack

2019 ◽  
Vol 5 (4) ◽  
pp. 1800799 ◽  
Author(s):  
Kwanyong Pak ◽  
Junhwan Choi ◽  
Changhyeon Lee ◽  
Sung Gap Im
Keyword(s):  
Low Power ◽  
Organic Transistor ◽  
Bilayer Dielectric

Twisted Bilayer Dielectric Photonic Crystal Slabs

2021 ◽  
Author(s):  
Haoning Tang ◽  
Fan Du ◽  
Stephen Carr ◽  
Clayton DeVault ◽  
Eric Mazur
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystal Slabs ◽  
Bilayer Dielectric

scholarly journals Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors

RSC Advances ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 2837-2843 ◽  
Author(s):  
Minho Yoon ◽  
Kyeong Rok Ko ◽  
Sung-Wook Min ◽  
Seongil Im
Keyword(s):  
Hydroxyl Group ◽  
Device Application ◽  
Organic Dielectric ◽  
Bilayer Dielectric

By inserting hydroxyl-group free organic dielectric between hydrophilic oxide dielectric and 2D TMD channel, highly stable 2D FETs are achieved. This concept was successfully extended to a practical device application such as stable 1 V operation of 2D MoTe2 FET.

High-Performance Low-Voltage Tetracene Phototransistors with Polymer∕AlO[sub x] Bilayer Dielectric

2006 ◽  
Vol 9 (9) ◽  
pp. G289 ◽  
Author(s):  
Jeong-M. Choi ◽  
Kimoon Lee ◽  
D. K. Hwang ◽  
Ji Hoon Park ◽  
Eugene Kim ◽  
...  
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Bilayer Dielectric
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