Submicron Schottky-Collector AlAs/InGaAs/InP Resonant Tunnel Diodes

1995 ◽  
Author(s):  
M. Reddy ◽  
M. J. Mondry ◽  
S. C. Martin ◽  
R. E. Muller ◽  
R. P. Smith ◽  
...  
Keyword(s):  
Tunnel Diodes ◽  
Resonant Tunnel

AlAs/GaAs Schottky-collector resonant-tunnel-diodes

1993 ◽  
Vol 36 (12) ◽  
pp. 1673-1676 ◽  
Author(s):  
Y. Konishi ◽  
S.T. Allen ◽  
M. Reddy ◽  
M.J.W. Rodwell ◽  
R.P. Smith ◽  
...  
Keyword(s):  
Tunnel Diodes ◽  
Resonant Tunnel

Low‐frequency noise measurements on AlGaAs/GaAs resonant tunnel diodes

1989 ◽  
Vol 55 (19) ◽  
pp. 1969-1971 ◽  
Author(s):  
M. H. Weichold ◽  
S. S. Villareal ◽  
R. A. Lux
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Tunnel Diodes ◽  
Low Frequency Noise ◽  
Noise Measurements ◽  
Resonant Tunnel

Noise model for double barrier resonant tunnel diodes

1991 ◽  
Vol 27 (23) ◽  
pp. 2158 ◽  
Author(s):  
T.G. van de Roer ◽  
H.C. Heyker ◽  
J.J.M. Kwaspen ◽  
H.P. Joosten ◽  
M. Henini
Keyword(s):  
Noise Model ◽  
Tunnel Diodes ◽  
Double Barrier ◽  
Resonant Tunnel

Votage step response of resonant tunnel diodes

1991 ◽  
Vol 10 (1) ◽  
pp. 63-66 ◽  
Author(s):  
A. Sellai ◽  
A. Zarea ◽  
M.S. Raven ◽  
D.P. Steenson ◽  
J.M. Chamberlain ◽  
...  
Keyword(s):  
Step Response ◽  
Tunnel Diodes ◽  
Resonant Tunnel

Double quantum well resonant tunnel diodes

1990 ◽  
Vol 57 (12) ◽  
pp. 1260-1261 ◽  
Author(s):  
D. J. Day ◽  
Y. Chung ◽  
C. Webb ◽  
J. N. Eckstein ◽  
J. M. Xu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Double Quantum Well ◽  
Resonant Tunnel

scholarly journals Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Yu-Chuan Lin ◽  
Ram Krishna Ghosh ◽  
Rafik Addou ◽  
Ning Lu ◽  
Sarah M. Eichfeld ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Tunnel Diodes ◽  
Van Der Waals Heterostructures ◽  
Resonant Tunnel

Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes

2002 ◽  
Author(s):  
S.T. Alien ◽  
H. Reddy ◽  
M.J.W. Rodwell ◽  
R.P. Smith ◽  
S.C. Martin ◽  
...  
Keyword(s):  
Tunnel Diodes ◽  
Resonant Tunnel

scholarly journals Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering

2019 ◽  
Vol 30 ◽  
pp. 08004
Author(s):  
Natalia Vetrova ◽  
Yury Ivanov ◽  
Evgeny Kuimov ◽  
Mstislav Makeev ◽  
Sergey Meshkov ◽  
...  
Keyword(s):  
Current Transfer ◽  
Electrical Characteristics ◽  
Tunnel Diodes ◽  
Initial Portion ◽  
Transverse Current ◽  
Consistent Model ◽  
Current Voltage ◽  
Calculation Results ◽  
Temporal And Spatial ◽  
Resonant Tunnel

A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the current- voltage characteristic of the resonant tunnel diodes on AlGaAs- heterostructures is less than 3%.

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