Infrared Reflectance Spectrometer for Liquids at High Temperatures

1969 ◽  
Vol 23 (3) ◽  
pp. 230-234 ◽  
Author(s):  
John R. Sweet ◽  
William B. White

A modification of an infrared spectrometer is described which permits the measurement of vibrational spectra of glasses and liquids at high temperatures. Spectra are measured by specular reflectance from the liquid surface. A computer program is described which transforms the specular reflectance spectrum to an absorption spectrum by means of a Kramers—Kronig analysis.

1995 ◽  
Vol 389 ◽  
Author(s):  
Shaohua Liu ◽  
Peter Solomon ◽  
R. Carpio ◽  
B. Fowler ◽  
D. Simmons ◽  
...  

ABSTRACTThis paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.


2020 ◽  
Vol 74 (8) ◽  
pp. 851-867
Author(s):  
Timothy J. Johnson ◽  
Emmanuela Diaz ◽  
Kendall D. Hughey ◽  
Tanya L. Myers ◽  
Thomas A. Blake ◽  
...  

In combination with other parameters, the real, n([Formula: see text]), and imaginary, k([Formula: see text]), components of the complex refractive index, [Formula: see text] =  n + i k, can be used to simulate the optical properties of a material in different forms, e.g., its infrared spectra. Ultimately, such n/k values can be used to generate a database of synthetic reflectance spectra for the different morphologies to which experimental data can be compared. But obtaining reliable values of the optical constants n/k for solid materials is challenging due to the lack of optical quality specimens, usually crystals, large enough to measure. An alternative to crystals is to press the powder into a uniform disk. We have produced pellets from ammonium sulfate, (NH4)2SO4, powder and derived the pellets' n and k values via single-angle reflectance using a specular reflectance device in combination with a Fourier transform infrared spectrometer. The single-angle technique measures amplitude of light reflected from the material as a function of wavelength over a wide spectral domain; the optical constants are determined from the reflectance data using the Kramers–Kronig relationship. We investigate several parameters associated with the pellets and pellet formation and their effects upon delivering the most reliable n/k values. Parameters studied include pellet diameter, mass, and density (void space), drying, grinding, sieving, and particle size in the pellet formation, as well as pressing pressure and duration. Of these parameters, using size-selected mixtures of dried, small (<50 µm) particles and pressing at ≥10 tons for at least 30 min were found key to forming highly reflective samples. Comparison of two sets of previous literature n([Formula: see text]) and k([Formula: see text]) values obtained from crystalline (NH4)2SO4 both as crystal reflectance as well as extinction spectra of aerosols measured in a flow tube shows reasonable agreement, but suggests the present values, as confirmed from two independent techniques, represent a substantial improvement for n/k values for (NH4)2SO4, also demonstrating promise to measure the optical constants of other materials.


1999 ◽  
Author(s):  
Cheng-Lun Tsai ◽  
Yi-Sheong Chou ◽  
Jen-Yuan Tsai

1996 ◽  
Vol 438 ◽  
Author(s):  
R. A. Yankov ◽  
N. Hatzopoulos ◽  
W. Fukarek ◽  
M. Voelskow ◽  
V. Heera ◽  
...  

AbstractSolid solutions of SiC and III-V compound semiconductors are recognized as promising materials for novel semiconductor applications. This paper reports on experiments which explore the possibility of synthesizing thin buried layers of (SiC)l-x(AIN)x having composition of about x = 0.2 by co-implanting N+ and Al+ ions into 6H-SiC wafers maintained at temperatures in the range 200 - 800°C. Structural and compositional evaluation of as-implanted samples was carried out using a combination of Rutherford backscattering/channelling spectrometry and infrared reflectance spectroscopy. It is shown that the structures are highly sensitive to the substrate temperature. The use of sufficiently high temperatures (400 - 800°C) enables the crystallinity of the host material as well as relatively low damage levels to be maintained during implantation. The formation of AI-N bonds within the implanted layers is also confirmed over the temperature range studied.


1984 ◽  
Vol 44 ◽  
Author(s):  
Lauren A. Zellmer ◽  
William B. White

AbstractThe reaction between aqueous solutions and borosilicate glasses designed for commercial or defense waste immobilization produces a hydrated layer on the surface of the glass which can be characterized by infrared reflectance spectroscopy. Specular reflectance curves, obtained by Fourier transform infrared spectroscopy, can be deconvoluted by Kramers-Kronig analysis to obtain true absorption spectra. The pattern of Si-O stretching modes changes for alkali silicate glass, indicating changes in the network polymerization. The characteristic intense band of the borosilicate glasses simply changes intensity in a way that scales with degree of hydration. The progressive hydration of the glass surface also appears as a broad OH band which can be extracted from the reflectance curve by the deconvolution process.


1980 ◽  
Vol 34 (2) ◽  
pp. 165-166 ◽  
Author(s):  
J. P. Covey ◽  
D. G. Mead ◽  
D. R. Mattson

A vacuum infrared interferometric system for use to 5 cm−1 is outlined. Examples given include high resolution vibrational spectra of some gases.


1986 ◽  
Vol 90 ◽  
Author(s):  
J. M. Zavada ◽  
G. K. Hubler ◽  
H. A. Jenkinson ◽  
W. D. Laidig

ABSTRACTThe optical properties of a GaAs-AlAs superlattice have been examined using the non-destructive technique of infrared reflectance spectroscopy. Through this technique, the absorption edge, the effective superlattice refractive index, the thickness, and the optical grading of the superlattice-substrate were determined. Location of the absorption edge was made from the reflectance spectrum and showed general agreement with photoluminescence measurements. A more detailed analysis of the infrared spectra indicated the presence of a transition region between the substrate and the superlattice. Based on a non-linear least squares method for fitting the experimental data, a dispersion relation for the dielectric function was obtained. This dielectric function yielded a value for the superlattice refractive index that was lower than that of the corresponding, homogeneous, AlGaAs alloy film for wavelengths between 1.0 and 2.5 micrometers.


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