Study of Amorphous MoS2 Films Grown by Pulsed Laser Deposition

1998 ◽  
Vol 52 (9) ◽  
pp. 1160-1164 ◽  
Author(s):  
N. T. McDevitt ◽  
J. E. Bultman ◽  
J. S. Zabinski
Keyword(s):  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Initial Study ◽  
Amorphous Structure ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Sulfur ◽  
Deposited Films

The amorphous structure of MoS2 lms prepared by pulsed laser deposition (PLD) has been evaluated with the use of Raman and X-ray photoelectron spectroscopy (XPS). The initial study of the room-temperature deposited films indicated a featureless Raman spectrum. On closer examination, however, four weak reproducible bands were observed. There has been some confusion in the literature as to the nature of this spectrum—whether it represents an amorphous MoS3 structure or a mixture of MoS2 and sulfur. Our interpretation of the Raman and XPS data indicates that the laser-deposited films represent a mixture of small domains of MoS2 and amorphous sulfur.

Pulsed-Laser Deposition of TiNi Shape Memory Alloy Thin Films

2001 ◽  
Vol 672 ◽  
Author(s):  
X.Y. Chen ◽  
Y.F. Lu ◽  
Z.M. Ren ◽  
L. Zhang ◽  
J.P. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Deposited Films

ABSTRACTThin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is –20.8°C.

Structural Properties of Carbon Nitride Films Deposited by Reactive - Pulsed Laser Deposition Technique

2001 ◽  
Vol 695 ◽  
Author(s):  
A.R. Phani ◽  
J.E. Krzanowski ◽  
J.J. Nainaparampil
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Concentration ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray ◽  
Deposited Films

ABSTRACTCarbon nitride films have been deposited by the reactive pulsed laser deposition technique by ablating carbon in a nitrogen atmosphere at different substrate temperatures and different background pressures of nitrogen. Si(111) and 440C steel substrates were used in the present investigation. Deposited films are uniform and show good adhesion to the substrates. The deposition rates depend on laser fluence, background pressure, and target-substrate distance. The nitrogen concentration in the deposited films increases with increasing background nitrogen gas pressure and laser fluence. Fourier transform infrared spectroscopy has been employed to evaluated CN bonds. X-ray photoelectron spectroscopy has been used to study the composition of the deposited films. X-ray diffraction and atomic force microscopy techniques revealed that the deposited films have an oriented microcrystalline structure after annealing at 900°C with smooth surface. Electronic, mechanical and tribological properties of these films have also been discussed.

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

Pulsed Laser Deposition in a Zinc Alloy Corrosion Study

2003 ◽  
Vol 780 ◽  
Author(s):  
R. Guerrero-Penalva ◽  
M.H. Farías ◽  
L. Cota-Araiza
Keyword(s):  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Active Sites ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Reactive Element ◽  
General Mechanism ◽  
Zinc Alloy ◽  
Reactive Element Effect ◽  
X Ray

AbstractA significant improvement in corrosion resistance of the protecting oxide of alloys has been observed when adding small amounts of reactive elements, such as yttrium, this effect has been called reactive element effect (REE). The general mechanism of the REE has not been determined yet. In this work, we study a growing of a yttrium oxide film and its interaction with the phases η and α that constitutes the alloy Zn-22Al-2Cu named ZinalcoTM The alloy's surface was coated by a pulsed laser deposition technique. The deposit is controlled and characterized by x-ray photoelectron spectroscopy. The mechanism by which the reactive element produce its effects in this alloy is explained by the preferential interaction among the active sites related to the zinc rich phase and enhancing aluminum movement toward the surface where it is oxidized and the protection film formed.

Structural and Mechanical Properties of TiC/Ti and TiC/B4C Multilayers Deposited by Pulsed Laser Deposition

2002 ◽  
Vol 17 (6) ◽  
pp. 1390-1398 ◽  
Author(s):  
A. R. Phani ◽  
J. E. Krzanowski ◽  
J. J. Nainaparampil
Keyword(s):  
Mechanical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
Bilayer Thickness ◽  
Orientation Relationships ◽  
X Ray ◽  
Pin On Disc

Multilayers of TiC/Ti and TiC/B4C have been deposited by pulsed laser deposition. Ti, B4C, and TiC targets were used to deposit multilayer films onto 440C steel and silicon substrates at 40 °C. The structural, compositional, and mechanical properties of the multilayers were examined by x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy, and nanoindentation techniques. Tribological properties were also evaluated using a pin-on-disc friction and wear test. The TiC/Ti films were found to have a crystalline structure, and both (200)TiC/(100)Ti and (111)TiC/(101)Ti orientation relationships were found in these films. In the TiC/B4C films, only the sample with the largest bilayer thickness (25 nm) had significant crystallinity and only the TiC layer was crystalline. X-ray photoelectron spectroscopy depth profiles confirmed the presence of composition modulations in these films. Nanoindentation tests of the TiC/Ti multilayers showed hardness levels exceeding that predicted by the rule-of-mixtures. The TiC/B4C multilayers showed increasing hardness with decreasing bilayer thickness but reached only 22 GPa. The pin-on-disc tests gave friction values ranging from 0.3 to 0.9 for both sets of films. These results were correlated with the degree of crystallinity and grain structure of the films.

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

Pulsed laser deposition and characterization of conductive RuO2 thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1433-1436 ◽  
Author(s):  
A. Iembo ◽  
F. Fuso ◽  
E. Arimondo ◽  
C. Ciofi ◽  
G. Pennelli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Characteristics ◽  
Laser Deposition ◽  
X Ray ◽  
Substrate Interface

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

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