scholarly journals Oxidation Mechanism of Silicon Surface. Growth Kinetics of Very Thin Oxide Layers on Si(001) Surface Monitored in Real-time by Auger Electron Spectroscopy Combined with Reflection High Energy Electron Diffraction.

Hyomen Kagaku ◽  
2002 ◽  
Vol 23 (9) ◽  
pp. 536-552 ◽  
Author(s):  
Yuji TAKAKUWA
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Silicon Surface ◽  
Auger Electron ◽  
Oxidation Mechanism ◽  
High Energy ◽  
High Energy Electron ◽  
Kinetics Of

A RHEED study of Cu3Au (110) surface

1992 ◽  
Vol 50 (2) ◽  
pp. 1460-1461
Author(s):  
Yi Huang ◽  
John M. Cowley
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
High Energy ◽  
High Energy Electron ◽  
Ion Scattering ◽  
Long Period ◽  
The Ideal

In recent years the Cu3Au (110) surface has been studied by many authors to reveal its ordering structure and order-disorder transition phenomena. A 2×1 structure which corresponds to an ideal truncation of the ordered bulk crystal and a 4×1 reconstructed structure have been observed. Using ion scattering methods, McRae et al have determined the Au fractions in the first and the second layer at room temperature, which deviate from the ideal bulk value and indicate the segregation of Au to the surface. But the question how the atoms are rearranged in the 4×1 structure and why some of the Au stays in the second layer have not been answered. Another important question about Cu3Au (110) surface is whether the long period ordering structure (LPS) exists on the surface. In present work the Cu3Au (precise composition Cu71.7Au28.3) (110) surface is studied with Auger electron Spectroscopy (AES) and Reflection High Energy Electron Diffraction (RHEED) which have not been used to study the Cu3Au surface before.

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