scholarly journals Erratum to “Influence of average ionic radius of dopants in Zn site on thermal conductivity and dimensionless figure of merit for Zn1-(x+y)GaxInyO system (0.0 ≤x + y ≤0.007)” [Transactions of the Materials Research Society of Japan 37 [3] 429-433 (2012)]

2013 ◽  
Vol 38 (1) ◽  
pp. 143-143
Author(s):  
H. Takemoto ◽  
M. Saito ◽  
H. Yamamura
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Ionic Radius ◽  
Research Society ◽  
Dimensionless Figure Of Merit ◽  
Average Ionic Radius ◽  
Materials Research

Investigation of Thermoelectric Materials: Substitution effect of Bi on the Ag1-xPb18MTe20 (M = Sb, Bi) (x = 0, 0.14, 0.3)

2007 ◽  
Vol 1044 ◽  
Author(s):  
Mi-kyung Han ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
Mercouri G Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Substitution Effect ◽  
Dimensionless Figure Of Merit ◽  
The Matrix ◽  
Mass Fluctuation

AbstractWe performed comparative investigations of the Ag1-xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to better understand the roles of Sb and Bi on the thermoelectric properties. In both systems, the electrical conductivity nearly keeps the same values, while the Seebeck coefficient decreases dramatically in going from Sb to Bi. Compared to the lattice thermal conductivity of PbTe, that of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog, however, is higher than that of AgPb18SbTe20 and this is attributed largely to the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1-xPb18MTe20 (M = Bi) is found to be smaller than that of Ag1-xPb18MTe20 (M = Sb).

Thermoelectrical properties of α phase and γ phase NaxCo2O4 ceramics prepared by spark plasma sintering method

2013 ◽  
Vol 1490 ◽  
pp. 57-62 ◽  
Author(s):  
Natsuko Mikami ◽  
Keishi Nishio ◽  
Koya Arai ◽  
Tatsuya Sakamoto ◽  
Masahiro Minowa ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Spark Plasma Sintering ◽  
Figure Of Merit ◽  
Dimensionless Figure Of Merit ◽  
Α Phase ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Sintering Method ◽  
Acid Compound

ABSTRACTThe thermoelectrical properties of α and γ phases of NaxCo2O4 having different amounts of Na were evaluated. The γ NaxCo2O4 samples were synthesized by thermal decomposition in a metal-citric acid compound, and the α NaxCo2O4 samples were synthesized by self-flux processing. Dense bulk ceramics were fabricated using spark plasma sintering (SPS), and the sintered samples were of high density and highly oriented. The thermoelectrical properties showed that γ NaxCo2O4 had higher electrical conductivity and lower thermal conductivity compared with α NaxCo2O4 and that α NaxCo2O4 had a larger Seebeck coefficient. These results show that γ NaxCo2O4 has a larger power factor and dimensionless figure of merit, ZT, than α NaxCo2O4.

Effect of Ni in new skutterudite compounds CaxCo4Sb12

2003 ◽  
Vol 793 ◽  
Author(s):  
Matthieu Puyet ◽  
Bertrand Lenoir ◽  
Anne Dauscher ◽  
Hubert Scherrer ◽  
Moukrane Dehmas ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermal Properties ◽  
Beneficial Effect ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Positive Influence ◽  
Temperature Range ◽  
Dimensionless Figure Of Merit ◽  
Ni Substitution

ABSTRACTThe transport properties of the partially filled CaxCo4-yNiySb12 skutterudite compounds have been investigated in the 300 – 800 K temperature range. We underline the positive influence of the Ni substitution on the electrical resistivity and thermopower while the thermal properties – thermal conductivity – remains almost unaffected. These results suggest again a beneficial effect of Ni atoms on the dimensionless figure of merit in CoSb3 based compounds.

Thermoelectric performance of XI2 (X = Ge, Sn, Pb) bilayers

2021 ◽  
Author(s):  
Nan Lu ◽  
Jie Guan
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Transport Theory ◽  
Boltzmann Transport ◽  
Functional Theory ◽  
Boltzmann Transport Theory ◽  
Dimensionless Figure Of Merit ◽  
Structure Calculations

Abstract We study the thermal and electronic transport properties as well as the TE performance of three two-dimensional XI2 (X = Ge, Sn, Pb) bilayers using density functional theory and Boltzmann transport theory. We compared the lattice thermal conductivity, electrical conductivity, Seebeck coefficient, and dimensionless figure of merit (ZT) for the XI2 monolayers and bilayers. Our results show that the lattice thermal conductivity at room temperature for the bilayers is as low as ~1.1-1.7 Wm-1K-1, which is about 1.6 times as large as the monolayers for all the three materials. Electronic structure calculations show that all the XI2 bilayers are indirect-gap semiconductors with the band gap values between 1.84 eV and 1.96 eV at PBE level, which is similar as the corresponding monolayers. The calculated results of ZT show that the bilayer structures display much less direction dependent TE efficiency and have much larger n-type ZT values compared with the monolayers. The dramatic difference between the monolayer and bilayer indicates that the inter-layer interaction plays an important role in the TE performance of XI2, which provides the tunability on their TE characteristics.

High Effective Thermoelectrics Based on the Mg2Si-Mg2Sn Solid Solution

2011 ◽  
Vol 170 ◽  
pp. 286-292 ◽  
Author(s):  
Mikhail I. Fedorov ◽  
Vladimir K. Zaitsev ◽  
Grigory N. Isachenko
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Carrier Concentration ◽  
Figure Of Merit ◽  
Practical Application ◽  
Environment Friendly ◽  
Dimensionless Figure Of Merit ◽  
Solution Energy ◽  
Wide Range ◽  
P Type

The complex study of the thermoelectric properties in solid solutions between compounds Mg2X (X=Si, Ge, Sn) was accomplished. Analysis of the features of band structure, thermal conductivity and electrical properties in the wide range of temperature and carrier concentration has shown that the most effective thermoelectric can be achieved in the Mg2Si-Mg2Sn solid solution. Energy spectrum and carrier concentration optimization, and, also, lattice thermal conductivity minimization allowed to establish the most effective compounds for the thermoelectrics of n- and p- type. Thermoelectrics with the maximum dimensionless figure of merit of more than 1.2 and average ZT0.9 (in the temperature range 300-800K) were obtained with developed synthesis and doping techniques. These materials are cheap, wide spread and environment friendly, have non-toxic initial components. It is very favorable for practical application.

Preparation and Thermoelectric Properties of Bi-Doped Mg2Si Nanocomposites

2009 ◽  
Vol 66 ◽  
pp. 17-20 ◽  
Author(s):  
Mei Jun Yang ◽  
Wei Jun Luo ◽  
Qiang Shen ◽  
Hong Yi Jiang ◽  
Lian Meng Zhang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Heavy Doping ◽  
Nanocomposite Structures

Nanocomposites and heavy doping both are regarded as effective way to improve materials’ thermoelectric properties. 0.7at% Bi-doped Mg2Si nanocomposites were prepared by spark plasma sintering. Results of thermoelectric properties tests show that the doping of Bi atom effectively improves the electrical conductivity of Mg2Si，and the nanocomposite structures are helpful to reduce thermal conductivity and increase Seebeck coefficient, hence improving the thermoelectric performance. A maximum dimensionless figure of merit of 0.8 is obtained for the Bi-doped Mg2Si nanocomposite with 50 wt % nanopowder inclusions at 823K, about 63% higher than that of Bi-doped Mg2Si sample without nanopowder inclusions and 119% higher than that of microsized Mg2Si sample without Bi-doped, respectively.

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