Plasma Enhanced Atomic Layer Deposition of Iridium Oxide for Application in Miniaturized Neural Implants

High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice of material due to its biocompatibility, low electrochemical impedance, superior charge injection capacity, corrosion resistance, longevity, and electrochemical stability. Plasma enhanced atomic layer deposition (PE-ALD) and a suitable precursor, like (Methylcyclopentadienyl) (1,5- cyclooctadiene) iridium, could be a promising technique to produce highly conformal and performant IrOx-films at low temperatures and low costs. Various studies have reported the deposition of iridium oxide, but usually at very high temperatures. These processes are not suitable for polymer substrates and limit the use of such post-processing together with active implants. In this work the (Methylcyclopentadienyl) (1,5-cyclooctadiene) iridium(I) ((MeCp)Ir(COD)) precursor was used as a promising approach for depositing IrOx-films using low temperature PE-ALD. This precursor is normally used for chemical vapour deposition processes. First experiments were carried out on silicon substrates at deposition temperatures of 110 C°. The precursor was heated up to 75 °C and oxygen plasma was used as coreactant. The deposited films were analysed with EDX and AFM, showing a smooth surface and a promising ratio between the elements iridium and oxygen.