Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substrates

2005 ◽  
Vol 23 (3) ◽  
pp. L1-L3 ◽  
Author(s):  
Yoshi Okuyama ◽  
Carl Barelli ◽  
Christopher Tousseau ◽  
Seung Park ◽  
Yoshihide Senzaki
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Batch Process ◽  
Silicon Substrates ◽  
Hafnium Silicate ◽  
Layer Deposition

Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol

2009 ◽  
Vol 156 (8) ◽  
pp. G89 ◽  
Author(s):  
Jian Liu ◽  
William N. Lennard ◽  
Lyudmila V. Goncharova ◽  
Dolf Landheer ◽  
Xiaohua Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Hafnium Silicate ◽  
Layer Deposition

Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone

2004 ◽  
Vol 22 (4) ◽  
pp. 1175-1181 ◽  
Author(s):  
Yoshihide Senzaki ◽  
Seung Park ◽  
Hood Chatham ◽  
Lawrence Bartholomew ◽  
Wesley Nieveen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Hafnium Silicate ◽  
Liquid Precursors ◽  
Layer Deposition

ZrO2 Thin Films Grown on Silicon Substrates by Atomic Layer Deposition with Cp2Zr(CH3)2 and Water as Precursors

2003 ◽  
Vol 9 (4) ◽  
pp. 207-212 ◽  
Author(s):  
M. Putkonen ◽  
J. Niinistö ◽  
K. Kukli ◽  
T. Sajavaara ◽  
M. Karppinen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Silicon Substrates ◽  
Layer Deposition

Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor

2020 ◽  
Vol 46 (8) ◽  
pp. 10121-10129
Author(s):  
Jae-Hwan Kim ◽  
Tran Thi Ngoc Van ◽  
Jiwon Oh ◽  
Seung-Muk Bae ◽  
Sang Ick Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Single Source ◽  
Hafnium Silicate ◽  
Layer Deposition ◽  
Single Source Precursor

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

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