Limited dose and angle-directed beam atomic layer etching and atomic layer deposition processes for localized film coatings on 3D sidewall structures

2020 ◽  
Vol 38 (2) ◽  
pp. 022602
Author(s):  
Thomas E. Seidel ◽  
Michael I. Current
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Coatings ◽  
Layer Deposition ◽  
Deposition Processes ◽  
Atomic Layer Etching

scholarly journals A modular reactor design forin situsynchrotron x-ray investigation of atomic layer deposition processes

2015 ◽  
Vol 86 (11) ◽  
pp. 113901 ◽  
Author(s):  
Jeffrey A. Klug ◽  
Matthew S. Weimer ◽  
Jonathan D. Emery ◽  
Angel Yanguas-Gil ◽  
Sönke Seifert ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Reactor Design ◽  
X Ray ◽  
Layer Deposition ◽  
Deposition Processes

Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study

2012 ◽  
Vol 30 (1) ◽  
pp. 01A115 ◽  
Author(s):  
Maarit Kariniemi ◽  
Jaakko Niinistö ◽  
Marko Vehkamäki ◽  
Marianna Kemell ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Experimental Study ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Layer Deposition ◽  
Deposition Processes

scholarly journals Synthesis and Thermal Study of Hexacoordinated Aluminum(III) Triazenides for Use in Atomic Layer Deposition

2020 ◽  
Author(s):  
Rouzbeh Samii ◽  
David Zanders ◽  
Sydney Buttera ◽  
Vadim Kessler ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Density Functional ◽  
Atomic Layer ◽  
Single Step ◽  
Vapor Pressures ◽  
Scanning Calorimetry ◽  
Layer Deposition ◽  
Ligand Interactions ◽  
Deposition Processes ◽  
Decomposition Pathway

<p>Amidinate and guanidinate ligands have been used extensively to produce volatile and thermally stable precursors for atomic layer deposition. The triazenide ligand is relatively unexplored as an alternative ligand system. Herein, we present six new Al(III) complexes bearing three sets of a 1,3-dialkyltriazenide ligand. These complexes volatilize quantitatively in a single step with onset volatilization temperatures of ~150 °C and 1 Torr vapor pressures of ~134 °C. Differential scanning calorimetry revealed these Al(III) complexes exhibited exothermic events that overlapped with the temperatures of their mass loss events in thermogravimetric analysis. Using quantum chemical density functional theory computations, we found a decomposition pathway transforming the relatively large hexacoordinated Al(III) precursor into a smaller dicoordinated complex. The pathway relies on previously unexplored inter-ligand interactions, in which protons migrate between the triazenide ligands. These new Al(III) triazenides provides a series of alternative precursors with unique thermal properties that could be highly advantageous for vapor deposition processes of Al containing materials.</p>

Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

2020 ◽  
Vol 539 ◽  
pp. 125624 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Emanuela Schilirò ◽  
Giovanni Mannino ◽  
Salvatore Di Franco ◽  
Fabrizio Roccaforte
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Layers ◽  
Layer Deposition ◽  
Deposition Processes
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