scholarly journals An understandable approach to the temperature dependence of electric properties of polymer-filler composites using elementary quantum mechanics

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Masaru Matsuo ◽  
Rong Zhang ◽  
Yuezhen Bin
Keyword(s):  
Electron Transfer ◽  
Quantum Mechanics ◽  
Temperature Dependence ◽  
Low Voltage ◽  
Joule Heat ◽  
Electric Properties ◽  
Tunnel Current ◽  
Flexible Polymer ◽  
Polymer Filler ◽  
Floor Heating

Abstract In today’s society, with a high percentage of elderly people, floor heating to ensure constant temperature and heat jackets in winter play important roles in winter to them to live comfortable lives without compromising health – except tropical zones. Under floor heating maintains a comfortable temperature in a room without polluting the air and heat jackets allow for light clothing at comfortable temperatures. The two facilities are attributed to Joule heat generated by tunnel currents between adjacent short carbon fillers in flexible polymer matrixes under low voltage. The current between adjacent conductive fillers is due to electron transfer associated with elementary quantum mechanics. Most of undergraduate students investigating polymer physics will have learned, about electron transfer in relation to the temperature dependence of the conductivity of conductive filler-insulator polymer composites as well as the phenomenon of Joule heat at high school. Despite their industrial importance, most students show little interest for investigating electric properties, since most of polymers are insulation materials. Polymer scientists have carried out qualitative analyses for tunneling current using well-known simplified equations derived from complicated mathematical process formulated by solid-state physicists. Hence this paper is focused on a teaching approach for temperature dependence on electric properties of the polymer-filler composites relating to tunnel current in terms of elementary quantum mechanics. The approach also attempts to bridge education and research by including reference to the application limit of the well-known theories to such complicated composite systems that fillers are dispersed uniformly in the polymer matrix.

Solvent and temperature dependence of electron transfer in the inverted region

1993 ◽  
Vol 97 (50) ◽  
pp. 13126-13131 ◽  
Author(s):  
Pingyun Chen ◽  
Sandra L. Mecklenburg ◽  
Thomas J. Meyer
Keyword(s):  
Electron Transfer ◽  
Temperature Dependence ◽  
Inverted Region

P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation

2014 ◽  
Vol 1693 ◽  
Author(s):  
R. Nipoti ◽  
M. Puzzanghera ◽  
F. Moscatelli
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Ideality Factor ◽  
Low Voltage ◽  
Reverse Current ◽  
Forward Current ◽  
Current Region ◽  
Recombination Centers ◽  
Energy Dependent ◽  
Post Implantation

ABSTRACTTwo n+-i-p 6H-SiC diode families with P+ ion implanted emitter have been processed with all identical steps except the post implantation annealing: 1300°C/20min without C-cap has been compared with 1950°C/10min with C-cap. The analysis of the temperature dependence of the reverse current at low voltage (-100V) in the temperature range 27-290°C shows the dominance of a periphery current which is due to generation centers with number and activation energy dependent on the post implantation annealing process. The analysis of the temperature dependence of the forward current shows two ideality factor n region, one with n = 1.9/2 at low voltage and the other one with 1 < n < 2 without passing through 1 for increasing voltages. For both the diode families the current with n = 1.9/2 is a periphery current due to recombination centers with a thermal activation energy near the 6H-SiC mid gap. In the forward current region of 1 < n < 2, the two diode families show different ideality factor values which could be attributed to a different post implantation annealing defect activation.

Heat Transfer in Nanoelectronics by Quantum Mechanics

2013 ◽  
Author(s):  
Thomas Prevenslik
Keyword(s):  
Heat Transfer ◽  
Heat Capacity ◽  
Quantum Mechanics ◽  
Hot Spots ◽  
Quantum Electrodynamics ◽  
High Surface ◽  
Joule Heat ◽  
Circuit Element ◽  
The Creation ◽  
Circuit Elements

Today, the transient Fourier heat conduction equation is not considered valid for the derivation of temperatures from the dissipation of Joule heat in nanoelectronics because the dimension of the circuit element is comparable to the mean free path of phonon energy carriers. Instead, the Boltzmann transport equation (BTE) for ballistic transport based on the scattering of phonons within the element is thought to govern heat transfer. However, phonons respond at acoustic frequencies in times on the order of 10–100 ps, and therefore the BTE would not have meaning if the Joule heat is conserved by a faster mechanism. Unlike phonons with response times limited by acoustic frequencies, heat transfer in nanoelectronics based on QED induced heat transfer conserves Joule heat in times < 1 fs by the creation of EM radiation at optical frequencies. QED stands for quantum electrodynamics. In effect, QED heat transfer negates thermal conduction in nanoelectronics because Joule heat is conserved well before phonons respond. QED induced heat transfer finds basis in Planck’s QM given by the Einstein-Hopf relation in terms of temperature and EM confinement of the atom as a harmonic oscillator. QM stands for quantum mechanics and EM for electromagnetic. Like the Fourier equation, the BTE is based on classical physics allowing the atom in nanoelectronic circuit elements to have finite heat capacity, thereby conserving Joule heat by an increase in temperature. QM differs by requiring the heat capacity of the atom to vanish. Conservation of Joule heat therefore proceeds by QED inducing the creation of excitons (hole and electron pairs) inside the circuit element by the frequency up-conversion of Joule heat to the element’s TIR confinement frequency. TIR stands for total internal reflection. Under the electric field across the element, the excitons separate to produce a positive space charge of holes that reduce the electrical resistance or upon recombination are lost by the emission of EM radiation to the surroundings. TIR confinement of EM radiation is the natural consequence of the high surface to volume ratio of the nanoelectronic circuit elements that concentrates Joule heat almost entirely in their surface, the surfaces coinciding with the TIR mode shape of the QED radiation. TIR confinement is not permanent, present only during the absorption of Joule heat. Charge creation aside, QM requires nanoelectronics circuit elements to remain at ambient temperature while dissipating Joule heat by QED radiation to the surroundings. Hot spots do not occur provided the RI of the circuit element is greater than the substrate or surroundings. RI stands for refractive index. In this paper, QED radiation is illustrated with memristors, PC-RAM devices, and 1/ f noise in nanowires, the latter of interest as the advantage of QM in avoiding hot spots in nanoelectronics may be offset by the noise from the holes created in the circuit elements by QED induced radiation.

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