Influence of Secondary Phase Chemistry on Grain Boundary Film Thickness in Silicon Nitride / Einfluß der Sekundärphasenchemie auf die Korngrenzfilmdicke in Silicumnitrid

1992 ◽  
Vol 83 (8) ◽  
pp. 610-617
Author(s):  
Hans-Joachim Kleebe ◽  
Michael J. Hoffmann ◽  
Manfred Rühle
Keyword(s):  
Silicon Nitride ◽  
Grain Boundary ◽  
Film Thickness ◽  
Secondary Phase ◽  
Boundary Film ◽  
Phase Chemistry

High-Resolution Electron Microscopy Observations of Grain-Boundary Films in Silicon Nitride Ceramics

1992 ◽  
Vol 287 ◽  
Author(s):  
H.-J. Kleebe ◽  
M. K. Cinibulk ◽  
I. Tanaka ◽  
J. Bruley ◽  
R. M. Cannon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
High Resolution ◽  
Grain Boundary ◽  
Film Thickness ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Nitride Ceramics ◽  
Boundary Films ◽  
Repulsive Forces

ABSTRACTCharacterization of silicon nitride ceramics by transmission electron microscopy (TEM) provides structural and compositional information on intergranular phases necessary to elucidate the factors that can influence the presence and thickness of grain-boundary films. Different TEM techniques can be used for the detection and determination of intergranular-film thickness, however, the most accurate results are obtained by high-resolution electron microscopy (HREM). HREM studies were applied, in conjunction with analytical electron microscopy, to investigate the correlation between intergranular-phase composition and film thickness. Statistical analyses of a number of grain-boundary films provided experimental verification of a theoretical equilibrium film thickness. Model experiments on a high-purity Si3N4 material, doped with low amounts of Ca, suggest the presence of two repulsive forces, a steric force and a force produced by an electrical double layer, that may act to balance the attractive van der Waals force necessary to establish an equilibrium film thickness.

High-Temperature Properties of Silicon Nitride with Lu-Si-O-N Grain Boundary Phases

2006 ◽  
Vol 317-318 ◽  
pp. 425-428 ◽  
Author(s):  
Yoshinobu Yamamoto ◽  
Toshiyuki Nishimura ◽  
Naoto Hirosaki ◽  
S. Guo ◽  
J. Cao ◽  
...  
Keyword(s):  
Weight Gain ◽  
High Temperature ◽  
Silicon Nitride ◽  
Grain Boundary ◽  
Strain Curve ◽  
Secondary Phase ◽  
Silicon Oxynitride ◽  
Stress Strain Curve ◽  
High Temperature Properties ◽  
Nitride Ceramics

High-temperature properties of silicon nitride ceramics with Lu-silicon-oxynitride grain boundary phases were investigated. Si3N4 powder with 1.2 mol% (SN12) and 4.8 mol% (SN48) of Lu2O3 were gas-pressure hot-pressed at 1950°C for 2 h under 20 MPa in 1 MPa N2. SN12 consisted of elongated β-Si3N4 and a secondary phase, Lu4Si2O7N2, whilst SN48 consisted of elongated β-Si3N4 and Lu4Si2O7N2 + Lu2SiO5. At 1500°C and 1600°C, the stress-strain curve of SN48 was nonlinear, whilst that of SN12 was linear, indicating that SN12 broke as a brittle fracture at these temperatures. SN12 had excellent oxidation resistance and weight gain during the oxidation at 1500°C for 1000 h was 4 g/m2. Creep lifetime of SN12 at 1500°C under tensile stress of 137 MPa exceeded 1678.5 h.

Grain Boundary Film Thicknesses in Superplastically Deformed Silicon Nitride

2005 ◽  
Vol 80 (5) ◽  
pp. 1213-1221 ◽  
Author(s):  
Chong-Min Wang ◽  
Mamoru Mitomo ◽  
Toshiyuki Nishimura ◽  
Yoshio Bando
Keyword(s):  
Silicon Nitride ◽  
Grain Boundary ◽  
Boundary Film

Examination of Fracture Interfaces in Silicon Nitride

1975 ◽  
Vol 33 ◽  
pp. 60-61
Author(s):  
Nancy J. Tighe
Keyword(s):  
Silicon Nitride ◽  
Grain Boundary ◽  
Crack Growth ◽  
Subcritical Crack Growth ◽  
Slow Crack Growth ◽  
Ceramic Materials ◽  
Grain Boundary Sliding ◽  
Boundary Phase ◽  
Turbine Engines ◽  
Boundary Sliding

Silicon nitride is one of the ceramic materials being considered for the components in gas turbine engines which will be exposed to temperatures of 1000 to 1400°C. Test specimens from hot-pressed billets exhibit flexural strengths of approximately 50 MN/m2 at 1000°C. However, the strength degrades rapidly to less than 20 MN/m2 at 1400°C. The strength degradition is attributed to subcritical crack growth phenomena evidenced by a stress rate dependence of the flexural strength and the stress intensity factor. This phenomena is termed slow crack growth and is associated with the onset of plastic deformation at the crack tip. Lange attributed the subcritical crack growth tb a glassy silicate grain boundary phase which decreased in viscosity with increased temperature and permitted a form of grain boundary sliding to occur.

Phase Relationship Studies of Silicon Nitride System—A Key to Materials Design

1992 ◽  
Vol 287 ◽  
Author(s):  
T.S. Yen ◽  
W.Y. Sun
Keyword(s):  
Elevated Temperature ◽  
Silicon Nitride ◽  
Grain Boundary ◽  
Phase Behavior ◽  
Phase Diagrams ◽  
Room Temperature ◽  
Phase Relationship ◽  
Materials Design ◽  
Basic Approach ◽  
System A

ABSTRACTAdditions and revisions to several of the most important phase diagrams and phase behavior diagrams in the silicon nitride field are reviewed in this work, with emphasis on the Y-Si-A1-O-N system. This information is further used to make observations on the promising silicon nitride systems containing either highly refractory grain boundary phases or compatible matrix phases of desirable properties. Examples are provided to illustrate the advantage of such a basic approach to materials design. Hardness, toughness, strength at room temperature and elevated temperature and even sinterability can all be improved by adopting such an approach.

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