scholarly journals The role of synthesis conditions for structural defects and lattice strain in β-TaON and their effect on photo- and photoelectrocatalysis

2019 ◽  
Vol 74 (1) ◽  
pp. 71-83 ◽  
Author(s):  
Martin Rohloff ◽  
Sevilay Cosgun ◽  
Cyriac Massué ◽  
Thomas Lunkenbein ◽  
Anatoliy Senyshyn ◽  
...  
Keyword(s):  
Water Oxidation ◽  
Lattice Strain ◽  
Stacking Faults ◽  
Lattice Defects ◽  
Structural Defects ◽  
Synthesis Conditions ◽  
Carrier Traps ◽  
Synthesis Routes ◽  
Photoelectrochemical Water Oxidation

AbstractThe importance of the synthesis conditions on the structural and photocatalytic properties of tantalum oxide nitride was investigated by comparing two variants of phase-pure β-TaON obtained from application of two different synthesis routes, leading to one unstrained and one heavily anisotropically microstrained β-TaON as shown by XRD-based Rietveld refinement. HRTEM images reveal the origin of the strain to be lattice defects such as stacking faults. The strained β-TaON was found to be the clearly less active semiconductor in photochemical and photoelectrochemical water oxidation. The lattice defects are assumed to act as charge carrier traps hindering the photo-generated holes to be displaced to the reaction sites at the surface.

Role of Graphene Oxide as a Sacrificial Interlayer for Enhanced Photoelectrochemical Water Oxidation of Hematite Nanorods

2015 ◽  
Vol 119 (34) ◽  
pp. 19996-20002 ◽  
Author(s):  
Alagappan Annamalai ◽  
Aravindaraj G. Kannan ◽  
Su Yong Lee ◽  
Dong-Won Kim ◽  
Sun Hee Choi ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Water Oxidation ◽  
Photoelectrochemical Water Oxidation

Understanding the Role of Vanadium Vacancies in BiVO4 for Efficient Photoelectrochemical Water Oxidation

2021 ◽  
Author(s):  
Thanh Tran-Phu ◽  
Zelio Fusco ◽  
Iolanda Di Bernardo ◽  
Josh Lipton-Duffin ◽  
Cui Ying Toe ◽  
...  
Keyword(s):  
Water Oxidation ◽  
Photoelectrochemical Water Oxidation

Unraveling the role of Ti3C2 MXene underlayer for enhanced photoelectrochemical water oxidation of hematite photoanodes

2021 ◽  
Vol 52 ◽  
pp. 147-154 ◽  
Author(s):  
Haiyan Ji ◽  
Shan Shao ◽  
Guotao Yuan ◽  
Cheng Lu ◽  
Kun Feng ◽  
...  
Keyword(s):  
Water Oxidation ◽  
Photoelectrochemical Water Oxidation

Electrochemical and photoelectrochemical water splitting with a CoOx catalyst prepared by flame assisted deposition

2020 ◽  
Vol 49 (3) ◽  
pp. 588-592 ◽  
Author(s):  
Fusheng Li ◽  
Ziqi Zhao ◽  
Hao Yang ◽  
Dinghua Zhou ◽  
Yilong Zhao ◽  
...  
Keyword(s):  
Cobalt Oxide ◽  
Water Splitting ◽  
Water Oxidation ◽  
Oxide Catalyst ◽  
Photoelectrochemical Water Splitting ◽  
Deposition Method ◽  
Photoelectrochemical Water Oxidation

A cobalt oxide catalyst prepared by a flame-assisted deposition method on the surface of FTO and hematite for electrochemical and photoelectrochemical water oxidation, respectively.

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

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