Testing and Modeling the Gradually Applying Compressive Stress to Measuring the Strain of Self-Compacted Cement Paste Using Vipulanandan p-q Model

2022 ◽  
Vol 50 (3) ◽  
pp. 20210219
Author(s):  
Wael Mahmood ◽  
Ahmed Salih Mohammed ◽  
Panagiotis G. Asteris ◽  
Hawreen Ahmed
Keyword(s):  
Compressive Stress ◽  
Cement Paste ◽  
Q Model

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Measuring Iron Loss of the Electrical Steel Sheets with Different Grades under Compressive Stress Normal to the Surface

2019 ◽  
Vol 139 (4) ◽  
pp. 190-196
Author(s):  
Shinya Urata ◽  
Yoshitaka Maeda ◽  
Hideo Nakai ◽  
Yuuya Takeuchi ◽  
Kyyoul Yun ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Electrical Steel ◽  
Iron Loss ◽  
Steel Sheets ◽  
Electrical Steel Sheets
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