Surface dynamics of III—V semiconductors studied by in situ X-ray diffraction during molecular beam epitaxy
2005 ◽
Vol 220
(2/3)
◽
Keyword(s):
X Ray
◽
AbstractWe study the coarsening of two-dimensional crystalline islands on the (001) face of GaAs, InAs and GaSb after deposition at typical growth conditions in molecular beam epitaxy. The time-resolved island/pit size distributions are measured in situ using synchrotron X-ray diffraction and are analyzed together with the diffraction intensity oscillations during deposition. Whereas the deposition kinetics is similar for the three materials, they strongly differ in the coarsening. During coarsening, the mean correlation length grows proportional to