Epitaxial growth of graphene thin films on single crystal metal surfaces

2011 ◽  
pp. 228-255 ◽  
Author(s):  
J. Coraux ◽  
A.T. N’Diaye ◽  
C. Busse ◽  
T. Michely
2010 ◽  
Vol 34 (2) ◽  
pp. 78-91 ◽  
Author(s):  
O. Yabuhara ◽  
Y. Nukaga ◽  
M. Ohtake ◽  
F. Kirino ◽  
M. Futamoto

1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.


RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31327-31332 ◽  
Author(s):  
K. Wang ◽  
M. H. Tang ◽  
Y. Xiong ◽  
G. Li ◽  
Y. G. Xiao ◽  
...  

Epitaxial growth of colossal magnetoresistive thin films of La0.7Sr0.3MnO3 (LSMO) has been achieved on TiO2-terminated (001) SrTiO3 (STO) single-crystal substrates using PLD (pulsed laser deposition).


2011 ◽  
Vol 50 (10) ◽  
pp. 103001 ◽  
Author(s):  
Mitsuru Ohtake ◽  
Yoichi Sato ◽  
Jumpei Higuchi ◽  
Takahiro Tanaka ◽  
Fumiyoshi Kirino ◽  
...  

1992 ◽  
Vol 279 ◽  
Author(s):  
M. H. Yang ◽  
C. P. Flynn

ABSTRACTWe have studied the epitaxial growth of MgO single crystal thin films by depositing Mg onto MgO substrates in an oxygen atmosphere. This method provides a simple way to dope Mg18O layers uniformly into Mg16O. The well controlled layer thicknesses are suitable for bulk diffusion studies both in the MgO epilayer and the MgO substrate. The MgO growth rate was measured and found to be proportional to the Mg flux and to the square root of oxygen pressure at a given temperature, obeying the law of mass action. High quality MgO single crystal thin films, as indicated by RHEED and x-ray diffraction, were found to grow over u wide temperature range, as in the earlier work1 using e-beam evaporation.


1997 ◽  
Vol 310 (1-2) ◽  
pp. 184-193 ◽  
Author(s):  
Fumikazu Imai ◽  
Kimio Kunimori ◽  
Takaaki Manabe ◽  
Toshiya Kumagai ◽  
Hisakazu Nozoye

2010 ◽  
Vol 34 (4) ◽  
pp. 508-523 ◽  
Author(s):  
Yuri Nukaga ◽  
Mitsuru Ohtake ◽  
Osamu Yabuhara ◽  
Fumiyoshi Kirino ◽  
Masaaki Futamoto

2010 ◽  
Vol 34 (1) ◽  
pp. 5-20 ◽  
Author(s):  
T. Nishiyama ◽  
K. Shikada ◽  
M. Ohtake ◽  
F. Kirino ◽  
M. Futamoto

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