Epitaxial Growth of MgO Single Crystal Thin Film in Oxygen Atmosphere

1992 ◽  
Vol 279 ◽  
Author(s):  
M. H. Yang ◽  
C. P. Flynn
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Bulk Diffusion ◽  
Oxygen Atmosphere ◽  
Mass Action ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Studies ◽  
Mgo Substrate

ABSTRACTWe have studied the epitaxial growth of MgO single crystal thin films by depositing Mg onto MgO substrates in an oxygen atmosphere. This method provides a simple way to dope Mg18O layers uniformly into Mg16O. The well controlled layer thicknesses are suitable for bulk diffusion studies both in the MgO epilayer and the MgO substrate. The MgO growth rate was measured and found to be proportional to the Mg flux and to the square root of oxygen pressure at a given temperature, obeying the law of mass action. High quality MgO single crystal thin films, as indicated by RHEED and x-ray diffraction, were found to grow over u wide temperature range, as in the earlier work1 using e-beam evaporation.

scholarly journals Single-Crystal-like Structure of Poly(9,9-dioctylfluorene) Thin Films Evaluated by Synchrotron-Sourced Grazing-Incidence X-ray Diffraction

2007 ◽  
Vol 39 (12) ◽  
pp. 1306-1311 ◽  
Author(s):  
Masahiro Misaki ◽  
Shuichi Nagamatsu ◽  
Masayuki Chikamatsu ◽  
Yuji Yoshida ◽  
Reiko Azumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

Dielectric and Room Temperature Tunable Properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films on Pt/MgO

2002 ◽  
Vol 720 ◽  
Author(s):  
T.S. Kalkur ◽  
Woo-Chul Yi ◽  
Elliott Philofsky ◽  
Lee Kammerdine
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
High Tunability ◽  
High Dielectric ◽  
Mgo Substrate ◽  
Mg Doped

AbstractMg- doped Ba0.96 Ca0.04 Ti0.84Zr0.16O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structure of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 °C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

Epitaxial Growth of CaxSr1−xF2 Layers on CaF2 by Vacuum Evaporation

1985 ◽  
Vol 54 ◽  
Author(s):  
Nicholas G. Norton ◽  
K. S. Knight
Keyword(s):  
Single Crystal ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Single Phase ◽  
Epitaxial Films ◽  
Mixed Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Substrate Temperatures

ABSTRACTThe evaporation and epitaxial growth on single crystal CaF2 substrates of CaF2/SrF2 mixtures are investigated. The evaporated films are studied with X-ray diffraction and optical microscopy.X-ray diffraction results show that the evaporation of yCaF2 + (1 - y)SrF2 mixtures from a single boat, with y in the range 0 to 1, result in single phase, mixed crystals of composition CaxSr1−xF2. If Vegard's law is assumed to apply it is found experimentally that the film composition is the same as that of the source.For the evaporation of CaF2 and SrF2 onto cleaved CaF2 crystals it is shown that the best quality epitaxial films are obtained at substrate temperatures of∼400°C. At temperatures <400°C there is some broadening of the X-ray diffraction spots from the overlayer compared with those from the substrate. At temperatures>400°C there is a tendency for the epitaxial films to delaminate from the substrate.

Epitaxial growth and magnetic behavior of NiFe2O4 thin films

1996 ◽  
Vol 11 (5) ◽  
pp. 1187-1198 ◽  
Author(s):  
S. Venzke ◽  
R. B. van Dover ◽  
Julia M. Phillips ◽  
E. M. Gyorgy ◽  
T. Siegrist ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Structural Changes ◽  
Amorphous Material ◽  
Magnetic Behavior ◽  
Bulk Single Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Transmission Electron

Thin films of NiFe2O4 were deposited on SrTiO3 (001) and Y0.15Zr0.85O2 (yttria-stabilized zirconia) (001) and (011) substrates by 90°-off-axis sputtering. Ion channeling, x-ray diffraction, and transmission electron microscopy studies reveal that films grown at 600 °C consist of ∼300 Å diameter grains separated by thin regions of highly defective or amorphous material. The development of this microstructure is attributed to the presence of rotated or displaced crystallographic domains and is comparable to that observed in other materials grown on mismatched substrates (e.g., GaAs/Si or Ba2YCu3O7/MgO). Postdeposition annealing at 1000 °C yields films that are essentially single crystal. The magnetic properties of the films are strongly affected by the structural changes; unannealed films are not magnetically saturated even in an applied field of 55 kOe, while the annealed films have properties comparable to those of bulk, single crystal NiFe2O4. Homoepitaxial films grown at 400 °C also are essentially single crystal.

Epitaxial Growth of Cerium Oxide Buffer Layers on MgO, YSZ and Sapphire Substrates

2000 ◽  
Vol 619 ◽  
Author(s):  
A. Thorley ◽  
S. Gnanarajan ◽  
A. Katsaros ◽  
N. Savvides
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layers ◽  
Metal Target ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Sapphire Substrates ◽  
Pole Figures ◽  
Biaxial Alignment

ABSTRACTWe studied the epitaxial growth of CeO2 thin films deposited onto MgO(100), YSZ(100) and Al2O3(1102 ) (r-plane sapphire) substrates by reactive dc magnetron sputtering of a Ce metal target in an Ar/O2 plasma. The crystalline quality and biaxial alignment of the films was determined using x-ray diffraction techniques (θ-2θ, ω-scans, pole figures, ø-scans). The CeO2/MgO(100) and CeO2/Al2O3(1102) epitaxy was evident at 600°C and developed to nearly perfect biaxial alignment at 850°C with Δø = 5° and 9° respectively. The CeO2/YSZ (100) epitaxy occurred below 300°C while deposition at ≥ 650°C led to single-crystal quality CeO2 films with Δø = 0.2°.

scholarly journals Структура и сегнетоэлектрические свойства гетероэпитаксиальных тонких пленок NaNbO-=SUB=-3-=/SUB=-, полученных методом RF-катодного распыления

2020 ◽  
Vol 46 (2) ◽  
pp. 15
Author(s):  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
Н.В. Тер-Оганесян
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Oxygen Atmosphere ◽  
Cell Deformation ◽  
X Ray Diffraction ◽  
Cathode Sputtering ◽  
Ferroelectric State ◽  
X Ray ◽  
First Time

For the first time, thin films of NaNbO3 on a MgO(001) substrate, on which a SrRuO3 layer was previously deposited, were obtained by RF cathode sputtering in an oxygen atmosphere. According to x-ray diffraction analysis the films are single phase and single-crystalline. The lattice parameters in the tetragonal approximation for the NaNbO3 and SrRuO3 layers were: с(NaNbO3) = 0.3940(1) nm, a(NaNbO3) = 0.389(1) nm; с(SrRuO3) = 0.4004(1) nm, a(SrRuO3) = 0.392(3) nm. The unit cell deformation for NaNbO3 was ε33 = 0.007, ε11 = 0.002. Dielectric and piezoelectric measurements indicate that the films are in a ferroelectric state.

Epitaxial growth of PbTiO3 thin films on {100} SrTiO3 from solution precursors

1994 ◽  
Vol 52 ◽  
pp. 576-577
Author(s):  
Andreas Seifert
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Phase ◽  
Amorphous Solid ◽  
Epitaxial Films ◽  
Gravimetric Analysis ◽  
Layer Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solid Film

A mixed Pb-Ti-alkoxide liquid precursor, prepared from lead acetate and titanium iso-propoxide was used to form single crystal PbTiO3 thin films epitaxially on {100} SrTiO3 substrates.A gravimetric analysis of the precursor determined its molarity to 0.55 mol/1 and was carried out by drying the alkoxide overnight and heating it to 600° C for one hour. X-ray diffraction showed the resulting PbTiO3 powder to be single phase perovskite. PbTiO3 thin films were formed by spincoating previously annealed (1400°C, 2h) single crystal SrTiO3 substrates. During this process the precursor dries to a gel-like amorphous solid film that pyrolizes and crystallizes to the oxide during heat-treatment. XRD, SEM, TEM and AFM were used to characterize the progress of the epitaxial layer formation as well as the microstructural evolution of films heated at increasing temperatures, ranging from 400°C to 800°C. For XRD Θ-2Θ scans on PbTiO3 thin films heated at temperatures of 450°C and above, only the {00l} tetragonal PbTiO3 reflections (CPTO=0.4153 nm) could be observed, indicating strongly oriented or epitaxial films ({h00} of PbTiO3 (aPTO=0.3899 nm) is masked by (MX)} of the SrTiO3 substrate (aSTO=0.3904 nm)).

scholarly journals Comparative Study of Structural Properties of YBa2Cu3O7 Thin Films on SrTiO3 Single Crystal and Bicrystal Substrates by X- ray Diffraction

2005 ◽  
Vol 868 ◽  
Author(s):  
M.A. Navacerrada ◽  
A. Mehta ◽  
H.S. Sahibudeen ◽  
J.V. Acrivos
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Comparative Study ◽  
Single Crystal ◽  
Structural Properties ◽  
Periodic Lattice ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ybco Thin Films ◽  
Symmetrical Tilt

AbstractWe present a comparative study in terms of structural properties deduced from X - ray diffraction diagrams between YBa2Cu3O7 (YBCO) thin films fabricated on SrTiO3 (STO) single crystal substrates and bicrystallines substrates with a symmetrical tilt angle of 24 degrees. Periodic Lattice Distortions (PLD) have been observed around different Bragg peaks in YBCO thin films deposited on STO bicrystals while only diffraction peaks have been measured in the diagrams corresponding to the YBCO thin films deposited on STO single crystal substrates. Only in regions situated a 3.5 mm at both sides of the grain boundary the PDL have been investigated. Scans along different (h, k, l) directions allow us to conclude that the qPLD vector associated to the distortion is along the (h,-k,0) direction. However, we found that the amplitude of the components of the qPLD vector depend on the Bragg peak chosen. We believe such a result indicates that we have not a PDL with a simple qPLD vector. In this line, other (h, k, l) directions must be investigated to deduce the exact origin of the qPLD vector. Nevertheless, independently on the qPLD vector associated to the PLD, we believe that such a distortion in the lattice is a consequence of the stress field induced by the grain boundary in the YBCO thin film deposited on the bricrystal.

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