scholarly journals Coefficient of Interband Light Absorption by InAs/GaхIn1-хAs Quantum Dot Superlattice at Low Temperatures

2017 ◽  
Vol 18 (2) ◽  
pp. 151-157
Author(s):  
V.I. Boichuk ◽  
I.V. Bilynsky ◽  
R.I. Pazyuk

In the paper the InAs/GaxIn1-xAs superlattice system of small size cubic QDs (10 nm) has been considered. Dispersion relations for electron and hole subbands have been calculated for superlattices of different dimensionality. The dependences of the interband absorption coefficient on light frequency, quantum dot size and interdot distance have been researched.It is shown, that the dimension of the superlattice has influence on the shape of the absorption bands and the increasingof the distance between quantum dots is followed by narrowing of the absorption peaks for all three superlatticetypes.

Nanoscale ◽  
2021 ◽  
Author(s):  
Shao-Huan Hong ◽  
Shakil N. Afraj ◽  
Ping-Yu Huang ◽  
Yi-Zi Yeh ◽  
Shih-Huang Tung ◽  
...  

Low-dimensional all-inorganic perovskite quantum dots (QDs) have been increasingly developed as photo-sensing materials in the field of photodetectors because of their strong light-absorption capability and broad bandgap tunability. Here, solution-processed...


2006 ◽  
Vol 6 (11) ◽  
pp. 3329-3332 ◽  
Author(s):  
Heejun Jeong

We have measured the electronic transport properties of the coupled quantum dot devices at low temperatures. The interplay between the strong many body spin interaction and the molecular states are probed in linear and non-linear transport regime. We observe the formation of strong coherent molecular states clearly visible in the double dot conductance phase diagram. In our study, the spin configuration in multiply coupled quantum dots could be identified using Kondo phenomenon. In addition, the characteristics of the spin dependent molecular states and phase dependant tunneling have been also observed using non-linear conductance measurement of the double dots. The results suggest the importance of the diverse spin related physical issues in artificial quantum dot devices.


2008 ◽  
Vol 4 (2) ◽  
pp. 106-112 ◽  
Author(s):  
K. G. Dvoyan ◽  
D. B. Hayrapetyan ◽  
E. M. Kazaryan

2001 ◽  
Vol 696 ◽  
Author(s):  
Gregory L. Snider ◽  
Alexei O. Orlov ◽  
Ravi K. Kummamuru ◽  
Rajagopal Ramasubramaniam ◽  
Islamshah Amlani ◽  
...  

AbstractAn overview is given of the quantum-dot cellular automata (QCA) architecture, along with a summary of experimental demonstrations of QCA devices. QCA is a transistorless computation paradigm that can provide a solution to such challenging issues as device and power density. The basic building blocks of the QCA architecture, such as AND, OR gates and clocked cells have been demonstrated and will be presented here. The quantum dots used in the experiments to date are metal islands that are coupled by capacitors and tunnel junctions, and devices operate only at very low temperatures. For QCA to be used in practical devices, the operating temperature must be raised, and issues such as background charge must be addressed. An introduction will be given to these issues and possible solutions.


Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2696
Author(s):  
Yu-Ming Huang ◽  
Jo-Hsiang Chen ◽  
Yu-Hau Liou ◽  
Konthoujam James Singh ◽  
Wei-Cheng Tsai ◽  
...  

Quantum dot (QD)-based RGB micro-LED technology is seen as one of the most promising approaches towards full color micro-LED displays. In this work, we present a novel nanoporous GaN (NP-GaN) structure that can scatter light and host QDs, as well as a new type of micro-LED array based on an NP-GaN embedded with QDs. Compared to typical QD films, this structure can significantly enhance the light absorption and stability of QDs. As a result, the green and red QDs exhibited light conversion efficiencies of 90.3% and 96.1% respectively, leading to improvements to the luminous uniformity of the green and red subpixels by 90.7% and 91.2% respectively. This study provides a viable pathway to develop high-uniform and high-efficient color conversion micro-LED displays.


2017 ◽  
Vol 11 (04) ◽  
pp. 1 ◽  
Author(s):  
Davit A. Baghdasaryan ◽  
David B. Hayrapetyan ◽  
Hayk A. Sarkisyan ◽  
Eduard M. Kazaryan ◽  
Sergey I. Pokutnyi

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