Optical fatigue of dielectric coatings in the femtosecond regime: physical mechanisms and metrology

2021 ◽  
Author(s):  
◽  
Linas Smalakys
Author(s):  
Koenraad G F Janssens ◽  
Omer Van der Biest ◽  
Jan Vanhellemont ◽  
Herman E Maes ◽  
Robert Hull

There is a growing need for elastic strain characterization techniques with submicrometer resolution in several engineering technologies. In advanced material science and engineering the quantitative knowledge of elastic strain, e.g. at small particles or fibers in reinforced composite materials, can lead to a better understanding of the underlying physical mechanisms and thus to an optimization of material production processes. In advanced semiconductor processing and technology, the current size of micro-electronic devices requires an increasing effort in the analysis and characterization of localized strain. More than 30 years have passed since electron diffraction contrast imaging (EDCI) was used for the first time to analyse the local strain field in and around small coherent precipitates1. In later stages the same technique was used to identify straight dislocations by simulating the EDCI contrast resulting from the strain field of a dislocation and comparing it with experimental observations. Since then the technique was developed further by a small number of researchers, most of whom programmed their own dedicated algorithms to solve the problem of EDCI image simulation for the particular problem they were studying at the time.


2020 ◽  
pp. 51-58
Author(s):  
Aleksandr I. Kazmin ◽  
Pavel A. Fedjunin

One of the most important diagnostic problems multilayer dielectric materials and coatings is the development of methods for quantitative interpretation of the checkout results their electrophysical and geometric parameters. The results of a study of the potential informativeness of the multi-frequency radio wave method of surface electromagnetic waves during reconstruction of the electrophysical and geometric parameters of multilayer dielectric coatings are presented. The simulation model is presented that makes it possible to evaluate of the accuracy of reconstruction of the electrophysical and geometric parameters of multilayer dielectric coatings. The model takes into account the values of the electrophysical and geometric parameters of the coating, the noise level in the measurement data and the measurement bandwidth. The results of simulation and experimental investigations of reconstruction of the structure of relative permittivitties and thicknesses of single-layer and double-layer dielectric coatings with different thicknesses, with different values of the standard deviation (RMS) of the noise level in the measured attenuation coefficients of the surface slow electromagnetic wave are presented. Coatings based on the following materials were investigated: polymethyl methacrylate, F-4D PTFE, RO3010. The accuracy of reconstruction of the electrophysical parameters of the layers decreases with an increase in the number of evaluated parameters and an increase in the noise level. The accuracy of the estimates of the electrophysical parameters of the layers also decreases with a decrease in their relative permittivity and thickness. The results of experimental studies confirm the adequacy of the developed simulation model. The presented model allows for a specific measuring complex that implements the multi-frequency radio wave method of surface electromagnetic waves, to quantify the potential possibilities for the accuracy of reconstruction of the electrophysical and geometric parameters of multilayer dielectric materials and coatings. Experimental investigations and simulation results of a multilayer dielectric coating demonstrated the theoretical capabilities gained relative error permittivity and thickness of the individual layers with relative error not greater than 10 %, with a measurement bandwidth of 1 GHz and RMS of noise level 0,003–0,004.


2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


1998 ◽  
Author(s):  
J. Benbrik ◽  
G. Rolland ◽  
P. Perdu ◽  
B. Benteo ◽  
M. Casari ◽  
...  

Abstract Focused Ion Beam is commonly used for IC repairs and modifications. However, FIB operation may also induce a damaging impact which can takes place far from the working area due to the charge-up phenomenon. A complete characterization joined to an in-depth understanding of the physical phenomena arising from FIB irradiation is therefore necessary to take into account spurious FIB induced effects and to enhance the success of FIB modifications. In this paper, we present the effects of FIB irradiation on the electrical DC performances of different electronic devices such as nMOS and pMOS transistors, CMOS inverters, PN junctions and bipolar transistors. From the observed behavior of the DC characteristics evolution of the devices, some suggestions about physical mechanisms inducing the electrical degradation are proposed.


Author(s):  
Anne E. Gattiker ◽  
Phil Nigh ◽  
Wojciech Maly

Abstract This article provides an analysis of a class of failures observed during the SEMATECH-sponsored Test Methods Experiment. The analysis focuses on use of test-based failure analysis and IDDQ signature analysis to gain insight into the physical mechanisms underlying such subtle failures. In doing so, the analysis highlights techniques for understanding failure mechanisms using only tester data. In the experiment, multiple test methods were applied to a 0.45 micrometer effective channel length ASIC. Specifically, ICs that change test behavior from before to after burn-in are studied to understand the physical nature of the mechanism underlying their failure. Examples of the insights provided by the test-based analysis include identifying cases where there are multiple or complex defects and distinguishing cases where the defect type is likely to be a short versus an open and determining if the defect is marginal. These insights can be helpful for successful failure analysis.


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