Non-recombination injection mode

A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure.

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Current-voltage characteristic and hole injection factor of point contact rectifiers in the forward direction

IRE Transactions on Electron Devices ◽

10.1109/t-ed.1956.14092 ◽

1956 ◽

Vol 3 (1) ◽

pp. 1-6 ◽

Cited By ~ 1

Author(s):

K. Lehovec ◽

A. Marcus ◽

K. Schoeni

Keyword(s):

Point Contact ◽

Forward Direction ◽

Voltage Characteristic ◽

Hole Injection ◽

Current Voltage Characteristic ◽

Current Voltage

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MODELLING OF STRUCTURE BASED ON JUNCTIONLESS TRANSISTOR IN TCAD SYSTEM

International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis ◽

10.29003/m1662.silicon-2020/397-399 ◽

2020 ◽

Author(s):

Grigor Moiseev

Keyword(s):

Numerical Modeling ◽

Leakage Current ◽

Voltage Characteristic ◽

Current Voltage Characteristic ◽

Current Voltage ◽

Junctionless Transistor ◽

New Type ◽

Junctionless Transistors ◽

Physical Principles

The purpose of this work is to synthesize a transistor with a lower leakage current. The paper describes a new type of transistors that do not contain p-n junctions - junctionless transistors. The physical principles of operation of such devices are briefly stated. On the basis of the junctionless transistor, a structure is proposed that has a lower leakage current as compared to the junctionless transistors. Numerical modeling of the proposed structure in the TCAD system is carried out. The current-voltage characteristic (CVC) of the proposed structure is calculated. It is clearly shown that the proposed structure has a lower leakage current in comparison with the leakage current of a junctionless transistor.

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Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

Review of Scientific Instruments ◽

10.1063/1.4848916 ◽

2013 ◽

Vol 84 (12) ◽

pp. 123506 ◽

Cited By ~ 3

Author(s):

L. Prevosto ◽

H. Kelly ◽

B. Mancinelli

Keyword(s):

Langmuir Probe ◽

Voltage Characteristic ◽

Current Voltage Characteristic ◽

Current Voltage ◽

Langmuir Probe Measurements ◽

Probe Measurements ◽

Non Equilibrium

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Device for Current Test Pulse Development Through a Diode in a Direct Direction

International Journal of Engineering & Technology ◽

10.14419/ijet.v7i3.19.16991 ◽

2018 ◽

Vol 7 (3.19) ◽

pp. 81

Author(s):

Nikolay Bespalov ◽

Yury Goryachkin

Keyword(s):

Data Transfer ◽

Forward Direction ◽

Voltage Characteristic ◽

Digital Code ◽

Current Voltage Characteristic ◽

Software Module ◽

Current Test ◽

Data Transfer Protocol ◽

Current Voltage ◽

Spi Interface

The article is devoted to the development of a device that allows to generate control current pulses to determine the current-voltage characteristic of diodes in the forward direction. To implement the device, we use NI Digital Electronics FPGA Board, which includes FPGA XC3S500E Xilinx Spartan-3E FPGA and the Linear Technology LTC2624 chip, containing four 12-bit DACs. We consider the creation of a software module via VHDL language that generates 12-bit digital code to create rectangular voltage control pulses with a successively increasing amplitude and transmitted via SPI interface as the part of 32-bit data transfer protocol, using Xilinx WebPACK ISE software.

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