scholarly journals Phase transition in vanadium oxide films formed by multistep deposition

2021 ◽  
Vol 24 (04) ◽  
pp. 362-371
Author(s):  
V.P. Kladko ◽  
◽  
V.P. Melnik ◽  
О.I. Liubchenko ◽  
B.M. Romanyuk ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Low Temperature ◽  
Vanadium Oxide ◽  
Multistep Method ◽  
Metal Insulator Transition ◽  
Two Stage ◽  
Metal Insulator ◽  
Low Temperature Annealing ◽  
Temperature Deposition

VOx films deposited using the multistep method have been investigated. These films were deposited by repeating the two-stage method of low-temperature deposition – low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.

Preparation and Properties of (La, Sr) MnO3 Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 220-223 ◽  
Author(s):  
Kuo Jiang ◽  
X.Y. Bao ◽  
Sheng Kai Gong
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
High Temperature ◽  
Low Temperature ◽  
Sol Gel ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Uniform Microstructure ◽  
Sol Gel Process ◽  
Metallic Conduction

LSMO films with various thicknesses were prepared on single crystal Si (111) substrates by sol-gel process. The films were dense and had a uniform microstructure. The films showed metallic conduction characteristics at low temperature and insulator characteristics at high temperature. The metal-insulator transition temperatures (Tmi) of the films were remarkably lower than that of the bulk ceramics. The effect is related to the distortion of crystal lattice resulted from the residual stress in the films.

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