TiNi is well known as a typical shape-memory alloy, and is expected to be a promising material for micro actuators. In order to realize micro electro mechanical systems (MEMS) with this material, we have to get thin crystal film of the material, since the shape-memory property appears only when the structure is crystalline. In our previous studies we developed a new apparatus as well as a new deposition process for lowering the crystallization temperature by using ion irradiation. In addition, we have found that the deposited film by the process can be crystallized at very low temperature (below 473 K) without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. In this study, we aim for the realization of crystallized TiNi film, which is deposited on Si substrate below 373 K substrate temperature. In order to realization the purpose, we have revealed the effect of Ar ion energy on lowering the crystallization temperature. The ion energy is measured with a quadrupole mass spectrometer (QMS) having an ion energy analyzer. The deposited TiNi films are examined with an X-ray diffraction (XRD). We found the plasma potential against the reactor chamber is important to be considered in the ion irradiation energy. The effects of ion energy for the crystallization of TiNi film are discussed.