Application of InN Based Quantum Dot in Reducing Short Circuit Current Variation of Solar Cell above Room Temperature

2013 ◽  
Vol 594-595 ◽  
pp. 3-7
Author(s):  
M.A. Rashid ◽  
F. Malek ◽  
A.N. Al-Khateeb ◽  
F.A. Rosli ◽  
M.A. Humayun ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Effect Of Temperature ◽  
Device Structure ◽  
Comparison Results ◽  
Current Variation

This paper focuses on the applicability of InN based quantum dot in the active layer of the solar cell to reduce the short circuit current variation above the room temperature. We have investigated numerically the effect of temperature on the short circuit current of the solar cell using InN based quantum dot in the active layer of the solar cell. The numerical results are compared with those obtained by using Ge based quantum dot. The comparison results revealed that the short circuit current has been increased slightly but the variation of short circuit current has been reduced significantly in the case of using InN quantum dot in the active layer of the device structure. As the results, InN can be considered as the best alternative material to fabricate solar cell with higher short circuit current in upcoming decades.

Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2907-2916 ◽  
Author(s):  
Shulong Lu ◽  
Shiro Uchida
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Molecular Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

Minimization of Open Circuit Voltage Fluctuation of Quantum Dot Based Solar Cell Using InN

2013 ◽  
Vol 372 ◽  
pp. 586-589
Author(s):  
Farah Ayuni Rosli ◽  
M.A. Rashid ◽  
F. Malek ◽  
M. Othman ◽  
A.A. Zaidi ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Active Layer ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Voltage Fluctuation ◽  
Device Structure ◽  
Comparison Results ◽  
Terminal Voltage ◽  
Near Future

This paper reports the improvement of open circuit voltage stability of solar cell using InN based quantum dot in the active layer of the device structure. We have analyzed theoretically the temperature dependence of the open circuit voltage of the solar cell to investigate its fluctuation using Ge and InN based quantum dot in the active layer of the solar cell. Numerical results obtained are compared. The comparison results reveal that the open circuit voltage has been reduced a little bit but the fluctuation of terminal voltage has been reduced significantly by using InN quantum dot in the active layer of the device structure. Therefore InN is proved to be an excellent material to fabricate solar cell to provide higher stability in the open circuit voltage of the solar cell in very near future.

High short-circuit current density in a non-toxic Bi2S3 Quantum dot sensitized solar cell

2021 ◽  
pp. 100783
Author(s):  
Christopher Rosiles-Perez ◽  
Sirak Sidhik ◽  
Luis Ixtilico-Cortés ◽  
Fernando Robles-Montes ◽  
Tzarara López-Luke ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density

A Comparative Study of Confined Carrier Concentration of Laser Using Quantum well and Quantum Dot in Active Layer

2013 ◽  
Vol 701 ◽  
pp. 188-191 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
A. Yusof ◽  
F.S. Abdullah ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Quantum Dot ◽  
Quantum Well ◽  
Comparative Study ◽  
Carrier Concentration ◽  
Active Layer ◽  
Carrier Density ◽  
Gain Medium ◽  
Device Structure ◽  
Comparison Results

This paper presents a comparative analysis of some of the important characteristics of the carriers of quantum well and quantum dot based laser. Among the characteristics of the carriers, confined carrier concentrations in the gain medium as well as the carrier concentrations at the threshold have been studied extensively by using InxGa1-xN based quantum well and InxGa1-xN based quantum dot in the active layer of the laser structure. The numerical results obtained are compared to investigate the superiority of the quantum dot over quantum well. It is ascertained from the comparison results that InxGa1-xN based quantum dot provides higher density of confined carrier and lower level of carrier concentration required for lasing action. This paper reports the enhancement of confined carrier density and minimization of carrier concentration at threshold of laser using InxGa1-xN based quantum dot as the active layer material. Hence, it is revealed that better performances of lasers have been obtained using InxGa1-xN based quantum dot than that of quantum well in the active medium of the device structure.

Effect of PMMA and Graphene Addition on the Performances of Organic Solar Cells

2013 ◽  
Vol 805-806 ◽  
pp. 1235-1239 ◽  
Author(s):  
Cheng Fang Ou ◽  
Pei Yun Chen
Keyword(s):  
Solar Cell ◽  
Active Layer ◽  
Organic Solar Cells ◽  
Polymer Solar Cell ◽  
Cell Structure ◽  
Short Circuit ◽  
Conductive Polymer ◽  
Weight Ratio ◽  
Short Circuit Current ◽  
Short Circuit Current Density

Poly (3-hexylthiophene) (P3HT) is a wide application in active layer of solar cell. It is a soluble conductive polymer but their mechanical properties are poor and its conductivity is unstable in environmental condition. We add polymethylmethacrylate (PMMA) into active layer to overcome these disadvantages. We investigated the effect of adding PMMA and graphene into solar cell on its characteristics of polymer solar cell. The cell structure was ITO/PEDOT:PSS/P3HT:PCBM:PMMA/Ca/Al. The 0.02, 0.04 and 0.06 weight ratio of PMMA were added into the P3HT:PCBM (1:1 ratio by weight) active layer. The device with 0.04 PMMA exhibits the highest short circuit current density (Jsc, 9.01 mA/cm2 ) and power conversion efficiency (PCE, 3.39%). The increases of Jsc and PCE are 26.5% and 49.3%, respectively compared with the device based on the pristine P3HT:PCBM active layer giving Jsc and PCE of 7.12 mA/cm2 and 2.27%. Graphene exhibits good electron conductivity, thermal conductivity, chemical stability and strength. We investigated the effect of inserting graphene between hole transfer layer (HTL) of poly (ethylene dioxythiophene) (PEDOT)-polystyrene sulfonic acid (PSS) (PEDOT:PSS) and active layer on the characteristics of polymer solar cell. The cell structure was ITO/PEDOT:PSS/Graphene/P3HT:PCBM:PMMA/Ca/Al. The concentration of graphene solution was 2.2 mg/ml and the graphene layer was coated by spin-coating at 6000 rpm and the weight ratio of PMMA in the P3HT:PCBM active layer was 0.04. The Jsc of device was increased to 9.45 mA/cm2 , an increase of 32.7%. The PCE of the device was increased to 3.63%, an increase of 59.9%.

scholarly journals PREPARATION AND CHARACTERIZATION OF P3HT-PCBM ORGANIC SOLAR CELLS

2013 ◽  
pp. 23-25
Author(s):  
ANUBHAV GUPTA ◽  
PRAVEEN S ◽  
ABHISHEK KUMAR ◽  
PRIYANKA SHREE ◽  
SUCHANA MISHRA
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Active Layer ◽  
Organic Solar Cells ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Glass Substrates

Organic solar cells using P3HT: PCBM as an active layer on ITO coated glass substrates were fabricated and characterized. Different air annealing procedures and cathode materials were tried and the characteristics were compared with that of a standard thin film polycrystalline silicon solar cell. It was found that the sample prepared with post-deposition air annealing at 130 oC improves the open circuit voltage (Voc) considerably. Besides, short circuit current (Isc) and the efficiency (η) were highest for the sample with a non annealed active layer. Series resistance (Rs) for this sample was lowest, but 103 times higher than that of the silicon solar cell, which in turn may have reduced the efficiency value for the organic cell compared to silicon.

Improvement of Short-Circuit Current of Quantum Dot Sensitive Solar Cell Through Various Size of Quantum Dots

2021 ◽  
Vol 31 (1) ◽  
pp. 16-22
Author(s):  
Seung Hwan Ji ◽  
◽  
Hye Won Yun ◽  
Jin Ho Lee ◽  
Bum-Sung Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Quantum Dot ◽  
Short Circuit ◽  
Short Circuit Current

Effects of Temperature on I-V Characteristics of InAs/GaAs Quantum-Dot Solar Cells

2015 ◽  
Vol 1103 ◽  
pp. 129-135 ◽  
Author(s):  
Saichon Sriphan ◽  
Suwit Kiravittaya ◽  
Supachok Thainoi ◽  
Somsak Panyakaew
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Series Resistance ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Substantial Improvement ◽  
Open Circuit ◽  
Gaas Quantum Dot

The current-voltage (I-V) characteristics of quantum-dot (QD) solar cells under illumination at various temperatures are presented. Stacked of high-density self-assembled InAs/GaAs QDs were incorporated into the Schottky-barrier-type solar cell structure. The I-V characteristics reveal that both short-circuit current and open-circuit voltage of the QD solar cell reduce when the measurement temperature increases. This result is unexpected and inconsistent with a basic solar cell theory where the temperature is believed to cause the enhancement of the short-circuit current. By considering the solar-cell circuit model, we can explain the obtained I-V curves by a high series resistance of the cell structure. Theoretical exclusion of the series resistance shows a substantial improvement of solar cell fill factor and efficiency. This work therefore suggests that reduction of series resistance by properly doping of the epitaxial layers can improve these devices.

The Influence of the Fullerene on the Optical Constants of the Photoactive Blend Film of a Polymer Solar Cell

2010 ◽  
Vol 74 ◽  
pp. 164-169 ◽  
Author(s):  
Pasquale Morvillo ◽  
Eugenia Bobeico ◽  
Salvatore Esposito
Keyword(s):  
Solar Cell ◽  
Optical Constants ◽  
Polymer Solar Cell ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Current Output ◽  
Blend Film

The short circuit current density (Jsc) of polymer solar cells is strictly related to the absorption of the blend film. Recently it has been shown that the use of [70]PCBM as electron acceptor can improve the current output of such devices because C70 derivatives have a stronger and broader absorption compared to C60 ones. The aim of this work is to study the influence of the fullerene on the optical behaviour of the photoactive blend film of a polymer solar cell. We have determined the optical constants of a P3HT:[70]PCBM blend film and studied their variation as a function of the annealing temperature. Afterward, we simulated the optical absorption of the active layer inside the device structure and calculated the maximum achievable Jsc with the aim to correlate the variation of the optical constants to the device output current. We compared this value with that one obtained using a P3HT:[60]PCBM blend.

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