AlGaN/GaN HEMTs with 2DHG Back Gate Control
Keyword(s):
ABSTRACTIn this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.
2016 ◽
Vol 55
(8)
◽
pp. 084301
◽
2014 ◽
Vol 53
(4S)
◽
pp. 04EF09
◽
2018 ◽
Vol 32
(2)
◽
pp. e2518
◽
2013 ◽
Vol 153
(1)
◽
pp. 53-57
◽
2018 ◽
Vol 215
(24)
◽
pp. 1800090
◽