Interaction of a 10 eV silicon beam with the Si(111) surface: A molecular dynamics study

1987 ◽  
Vol 2 (6) ◽  
pp. 805-808 ◽  
Author(s):  
Brian W. Dodson ◽  
Paul A. Taylor
Keyword(s):  
Molecular Dynamics ◽  
Vibrational Excitation ◽  
Covalent Binding ◽  
Low Energy ◽  
Energy Beam ◽  
Substrate Structure ◽  
Deposition Processes ◽  
First Time ◽  
Beam Deposition ◽  
Silicon Beam

The interaction of a low-energy silicon beam with a silicon substrate has been simulated. The combined effects of vibrational lattice excitation and of covalent binding have been included for the first time by using a molecular dynamics technique and an empirical potential that accurately describes the covalent Si–Si interactions. A 10 eV silicon beam was directed normal to a silicon (111) substrate. Sticking ratio, penetration depth, substrate structure, and vibrational excitation of the substrate are quantitatively determined. The special features of such low-energy beam deposition relative to thermal deposition processes are discussed.

scholarly journals Study of Icaritin Films by Low-Energy Electron Beam Deposition

2021 ◽  
Vol 23 (2) ◽  
pp. 77
Author(s):  
Tongfei Cheng ◽  
Jinxing Cao ◽  
Xiaohong Jiang ◽  
M.A. Yarmolenko ◽  
A.A. Rogachev ◽  
...  
Keyword(s):  
Electron Beam ◽  
In Vitro Cytotoxicity ◽  
Low Energy ◽  
Cytotoxicity Test ◽  
Soaking Time ◽  
Energy Beam ◽  
Electron Beam Deposition ◽  
Relative Cell Viability ◽  
Beam Deposition

In this paper, icaritin film was prepared by low-energy beam electron beam deposition (EBD). The material test showed that the structure and composition of icaritin were not changed after electron beam deposition. Then, the film was sliced and immersed in simulated body fluids, it can be seen that the film was released quickly in the first 7 days. With the extension of soaking time, the release rate gradually slowed down, and the release amount exceeded 90% in about 20 days. In vitro cytotoxicity test showed that the relative cell viability rate of the film was still 92.32±1.30% (p<0.05), indicating that the film possessed excellent cytocompatibility.

Self-organization of Te clusters in nanofilm by low energy beam deposition

1998 ◽  
Vol 244 (5) ◽  
pp. 407-412 ◽  
Author(s):  
P.P. Chen ◽  
Z.Y. Wang ◽  
S.W. Yu ◽  
J.M. Hong ◽  
P.R. Poulsen ◽  
...  
Keyword(s):  
Low Energy ◽  
Self Organization ◽  
Energy Beam ◽  
Beam Deposition

Atomistic Simulation of Low-Energy Beam Deposition

1988 ◽  
Vol 100 ◽  
Author(s):  
Brian W. Dodson
Keyword(s):  
Atomistic Simulation ◽  
Incident Beam ◽  
Initial Energy ◽  
Low Energy ◽  
Many Body ◽  
Near Surface ◽  
Energy Beam ◽  
Beam Incident ◽  
Lattice Damage ◽  
Beam Deposition

ABSTRACTLow-energy (50 eV) homoepitaxial beam deposition of silicon is simulated using many-body silicon potentials and molecular dynamics techniques. Results are presented for the case of a 50 eV neutral silicon beam incident on the (2×1) dimer reconstructed Si(100) surface. The beam is aligned along (110) symmetry directions, which are the most natural channeling directions in the silicon lattice. Roughly 10% of the incident beam atoms are scattered from the surface with a small fraction of their initial energy. About half of the incident atoms penetrate the lattice, but scatter strongly and come to rest within 10–15Å of the surface. The remainder are steered accurately into the bulk (110) channels, where they penetrate some 30–100 Å into the lattice. Those atoms which do not undergo bulk channeling cause considerable lattice damage to the near-surface (depth ≥10Å) region.

Atomic-Scale Simulation of Silicon Atomic Beam Deposition

1987 ◽  
Vol 91 ◽  
Author(s):  
Brian W. Dodson
Keyword(s):  
Low Energy ◽  
Atomic Scale ◽  
Many Body ◽  
Energy Beam ◽  
Empirical Potential ◽  
Semiconductor Structures ◽  
Local Lattice ◽  
Atomic Beam Deposition ◽  
Grazing Angles ◽  
Beam Deposition

ABSTRACTThe mechanisms which control low energy (10–100 eV) beam deposition of silicon onto a relaxed (111) silicon substrate have been studied using a molecular dynamics technique. A many-body empirical potential was used to describe the covalent Si-Si bonding. 10 eV silicon beams with near-perpendicular incidence were simulated to study capture mechanisms and the local lattice excitation resulting from impact. Grazing angles of incidence (3°–30°) were studied for beam energies of 20–100 eV. For incidence angles less than an energy- and orientation-dependent critical value, the phenomenon of ‘surface channeling’ is predicted, in which the incoming particle is steered parallel to, and roughly 2 Å above, the surface of the substrate through inelastic substrate interactions. The phenomena seen in low-energy beam deposition offer new avenues of control over growth of modulated semiconductor structures.

Multicanonical Molecular Dynamics Simulation Study of the Liquid-Solid and Solid-Solid Transitions in Lennard-Jones Clusters

2011 ◽  
Author(s):  
Toshihiro Kaneko ◽  
Kenji Yasuoka ◽  
Ayori Mitsutake ◽  
Xiao Cheng Zeng
Keyword(s):  
Molecular Dynamics ◽  
Heat Capacity ◽  
Transition Temperature ◽  
Peak Position ◽  
Temperature Curve ◽  
Dynamics Simulation ◽  
Lennard Jones ◽  
Dynamics Simulations ◽  
First Time ◽  
Good Agreement

Multicanonical molecular dynamics simulations are applied, for the first time, to study the liquid-solid and solid-solid transitions in Lennard-Jones (LJ) clusters. The transition temperatures are estimated based on the peak position in the heat capacity versus temperature curve. For LJ31, LJ58 and LJ98, our results on the solid-solid transition temperature are in good agreement with previous ones. For LJ309, the predicted liquid-solid transition temperature is also in agreement with previous result.

Enhanced ductility in Cu64Zr36 metallic glasses induced by prolonged low-energy ion irradiation: a molecular dynamics study

2021 ◽  
pp. 159785
Author(s):  
Bida Zhu ◽  
MinSheng Huang ◽  
Zhenhuan Li ◽  
Juan Du ◽  
Yuanzun Sun ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Metallic Glasses ◽  
Ion Irradiation ◽  
Low Energy
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