Atomistic Simulation of Low-Energy Beam Deposition

1988 ◽  
Vol 100 ◽  
Author(s):  
Brian W. Dodson
Keyword(s):  
Atomistic Simulation ◽  
Incident Beam ◽  
Initial Energy ◽  
Low Energy ◽  
Many Body ◽  
Near Surface ◽  
Energy Beam ◽  
Beam Incident ◽  
Lattice Damage ◽  
Beam Deposition

ABSTRACTLow-energy (50 eV) homoepitaxial beam deposition of silicon is simulated using many-body silicon potentials and molecular dynamics techniques. Results are presented for the case of a 50 eV neutral silicon beam incident on the (2×1) dimer reconstructed Si(100) surface. The beam is aligned along (110) symmetry directions, which are the most natural channeling directions in the silicon lattice. Roughly 10% of the incident beam atoms are scattered from the surface with a small fraction of their initial energy. About half of the incident atoms penetrate the lattice, but scatter strongly and come to rest within 10–15Å of the surface. The remainder are steered accurately into the bulk (110) channels, where they penetrate some 30–100 Å into the lattice. Those atoms which do not undergo bulk channeling cause considerable lattice damage to the near-surface (depth ≥10Å) region.

Atomic-Scale Simulation of Silicon Atomic Beam Deposition

1987 ◽  
Vol 91 ◽  
Author(s):  
Brian W. Dodson
Keyword(s):  
Low Energy ◽  
Atomic Scale ◽  
Many Body ◽  
Energy Beam ◽  
Empirical Potential ◽  
Semiconductor Structures ◽  
Local Lattice ◽  
Atomic Beam Deposition ◽  
Grazing Angles ◽  
Beam Deposition

ABSTRACTThe mechanisms which control low energy (10–100 eV) beam deposition of silicon onto a relaxed (111) silicon substrate have been studied using a molecular dynamics technique. A many-body empirical potential was used to describe the covalent Si-Si bonding. 10 eV silicon beams with near-perpendicular incidence were simulated to study capture mechanisms and the local lattice excitation resulting from impact. Grazing angles of incidence (3°–30°) were studied for beam energies of 20–100 eV. For incidence angles less than an energy- and orientation-dependent critical value, the phenomenon of ‘surface channeling’ is predicted, in which the incoming particle is steered parallel to, and roughly 2 Å above, the surface of the substrate through inelastic substrate interactions. The phenomena seen in low-energy beam deposition offer new avenues of control over growth of modulated semiconductor structures.

scholarly journals Study of Icaritin Films by Low-Energy Electron Beam Deposition

2021 ◽  
Vol 23 (2) ◽  
pp. 77
Author(s):  
Tongfei Cheng ◽  
Jinxing Cao ◽  
Xiaohong Jiang ◽  
M.A. Yarmolenko ◽  
A.A. Rogachev ◽  
...  
Keyword(s):  
Electron Beam ◽  
In Vitro Cytotoxicity ◽  
Low Energy ◽  
Cytotoxicity Test ◽  
Soaking Time ◽  
Energy Beam ◽  
Electron Beam Deposition ◽  
Relative Cell Viability ◽  
Beam Deposition

In this paper, icaritin film was prepared by low-energy beam electron beam deposition (EBD). The material test showed that the structure and composition of icaritin were not changed after electron beam deposition. Then, the film was sliced and immersed in simulated body fluids, it can be seen that the film was released quickly in the first 7 days. With the extension of soaking time, the release rate gradually slowed down, and the release amount exceeded 90% in about 20 days. In vitro cytotoxicity test showed that the relative cell viability rate of the film was still 92.32±1.30% (p<0.05), indicating that the film possessed excellent cytocompatibility.

Self-organization of Te clusters in nanofilm by low energy beam deposition

1998 ◽  
Vol 244 (5) ◽  
pp. 407-412 ◽  
Author(s):  
P.P. Chen ◽  
Z.Y. Wang ◽  
S.W. Yu ◽  
J.M. Hong ◽  
P.R. Poulsen ◽  
...  
Keyword(s):  
Low Energy ◽  
Self Organization ◽  
Energy Beam ◽  
Beam Deposition

High Energy Ion Beam Annealing in Implanted CdTe

1988 ◽  
Vol 100 ◽  
Author(s):  
S. P. Withrow ◽  
A. Lusnikov ◽  
H. J. Jiménez-Gonz´lez- ◽  
G. Dresselhaus
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
High Energy ◽  
Near Surface ◽  
Energy Beam ◽  
Annealing Effects ◽  
Lattice Damage ◽  
Implantation Process ◽  
Substrate Temperatures ◽  
Cu Ions

ABSTRACTThe annealing effects of a high energy beam of Cu ions on implanted CdTe crystals are studied. Single crystals of CdTe have been implanted with Eu (energy 60 keV, fluence 1 × 1016 cm−2) at substrate temperatures of 25°C, and 400°C. Lattice damage introduced by the implantation process was measured by Rutherford backscattering. The samples were then implanted with high energy Cu ions (energy 3.5 MeV, fluence 0.5 × 1016 cm−2) at substrate temperatures of 25°C and 200°C. Channeling spectra from these samples indicate a reduction in the near-surface lattice damage as a result of the Cu implantation that can be unambiguously separated from the external heating of the substrate.

Interaction of a 10 eV silicon beam with the Si(111) surface: A molecular dynamics study

1987 ◽  
Vol 2 (6) ◽  
pp. 805-808 ◽  
Author(s):  
Brian W. Dodson ◽  
Paul A. Taylor
Keyword(s):  
Molecular Dynamics ◽  
Vibrational Excitation ◽  
Covalent Binding ◽  
Low Energy ◽  
Energy Beam ◽  
Substrate Structure ◽  
Deposition Processes ◽  
First Time ◽  
Beam Deposition ◽  
Silicon Beam

The interaction of a low-energy silicon beam with a silicon substrate has been simulated. The combined effects of vibrational lattice excitation and of covalent binding have been included for the first time by using a molecular dynamics technique and an empirical potential that accurately describes the covalent Si–Si interactions. A 10 eV silicon beam was directed normal to a silicon (111) substrate. Sticking ratio, penetration depth, substrate structure, and vibrational excitation of the substrate are quantitatively determined. The special features of such low-energy beam deposition relative to thermal deposition processes are discussed.

Core-corona model analysis of the low energy beam scan at RHIC

2014 ◽  
Vol 335 (6-7) ◽  
pp. 660-665 ◽  
Author(s):  
M. Gemard ◽  
J. Aichelin
Keyword(s):  
Model Analysis ◽  
Low Energy ◽  
Energy Beam

A method for LEBT automation (low energy beam transport)

2002 ◽  
Author(s):  
J. Sredniawski ◽  
L. Solensten ◽  
R. Schmidt ◽  
J. Porter ◽  
Y. Ng ◽  
...  
Keyword(s):  
Low Energy ◽  
Beam Transport ◽  
Energy Beam

Atomistic Modeling of Interfacial Diffusion in the Lamellar Li0 TiAl

1999 ◽  
Vol 578 ◽  
Author(s):  
M. Nomura ◽  
D. E. Luzzi ◽  
V. Vitek
Keyword(s):  
Atomistic Simulation ◽  
Effective Activation Energy ◽  
Surprising Result ◽  
Atomistic Modeling ◽  
Many Body ◽  
Interfacial Diffusion ◽  
Self Diffusion ◽  
Diffusion Mechanisms ◽  
And Migration ◽  
Lamellar Interfaces

AbstractAtomistic simulation employing many-body central-force potentials was performed to elucidate the diffusion mechanisms in the bulk and at lamellar interfaces assuming a vacancy mechanism. First the self- diffusion of Ti and Al in stoichiometric structures was studied. It was found that the diffusion was faster along lamellar interfaces than in the bulk; the effective activation energy for the diffusion coefficient is about ∼15% lower. The simulations were then extended to investigate diffusion along lamellar boundaries with segregated Ti which is likely in Ti rich alloys. The surprising result is that diffusion remains practically unchanged when compared with the stoichiometric case. The reason is that while the path controlling the diffusion is different, the corresponding effective formation and migration energies are practically the same as in the stoichiometric case.

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