Raman studies of reactive DC-magnetron sputtered thin films of YBaCuO on MgO

1989 ◽  
Vol 4 (6) ◽  
pp. 1312-1319 ◽  
Author(s):  
K. C. Sheng ◽  
S. J. Lee ◽  
Y. H. Shen ◽  
X. K. Wang ◽  
E. D. Rippert ◽  
...  

Raman spectroscopy was employed to study Y–Ba–Cu–O films prepared by multilayer, reactive sputtering from separate Y, Cu, and Ba0.5Cu0.5 targets. A set of films having the composition YxBa2CuyOz with 0.7 < x < 1.8 and 2.8 < y < 3.5 and critical temperature with zero resistance, Tc(R = 0), ranging from 25 to 90 K was studied with the Raman technique. The correlation between Raman data and critical temperature, Tc, was investigated. This technique provides important information concerning the film crystallinity, homogencity, and impurity content (including other phases) which is useful in judging the quality of high Tc superconducting films. We also found that the rapid thermal annealing process is a very efficient way to reduce chemical reactions between the film and the substrate.

2009 ◽  
Vol 60-61 ◽  
pp. 246-250
Author(s):  
Yan Cui ◽  
Hui Lin Chen ◽  
Er Lei Shi ◽  
Jia Xin Zhao ◽  
Li Ding Wang

Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films have been fabricated on Pt/Ti/SiO2/Si substrate by a sol–gel method combined with a rapid thermal annealing process. The microstructure analysis of the thin films showed that the orientation ratio of (111) was 0.304,0.475 and 0.849 with x=0, 0.03, 0.08. The dielectric measurement suggested that the addition of Sr in Pb(Zr0.53Ti0.47) O3(PZT) thin films greatly improved the dielectric properties of PZT thin films. The dielectric constant for PZT thin films at a frequency of 2 kHz was 648,which was increased to 1239 when 3%at Sr was doped. Meanwhile, the dissipation factor was only increased from 0.02 to 0.03. Three kinds of piezoelectric micro-sensors have been prepared based on PSZT thin films and the sensing sensitivity of 0.017pc/uN, 0.033pc/uN, and 0.011pc/uN were realized as x increased, respectively. It indicated that micro-sensors with PSZT0.03 thin films showed better sensing property than other two.


2001 ◽  
Vol 688 ◽  
Author(s):  
Dong Chul Yoo ◽  
Jeong Yong Lee ◽  
Ik Soo Kim ◽  
Yong Tae Kim

AbstractYMnO3 thin films were sputtered on Si (100) substrates under different ambient conditions. After rapid thermal annealing process at 850 °C, the YMnO3 film deposited in Ar ambient had random orientations and the YMnO3 film deposited in Ar+O2 ambient was crystallized with distinct two layers, i.e., c-axis oriented layer in top region and random oriented layer in bottom region. Relations between the microstructure and the electrical properties of Pt/YMnO3/Si capacitor were investigated. Memory window and leakage current depended on the orientation of the YMnO3 thin films and the interfacial microstructure of the YMnO3/Si, respectively


2001 ◽  
Vol 33 (1-4) ◽  
pp. 291-301 ◽  
Author(s):  
Deok-sin Kil ◽  
Jong-beom Park ◽  
Jun-sik Lee ◽  
Jong-woo Yoon ◽  
Yong-sik Yu ◽  
...  

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