A novel mosaic-like structure in SrTiO3 thin films on a Pt(001) surface revealed by transmission electron microscopy

1996 ◽  
Vol 11 (11) ◽  
pp. 2777-2784 ◽  
Author(s):  
S. Takeno ◽  
S. Nakamura ◽  
K. Abe ◽  
S. Komatsu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution Imaging ◽  
Antiphase Boundaries ◽  
Growth Modes ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Resolution Imaging ◽  
Means Of Transmission

A novel mosaic-like structure in SrTiO3 thin films was discovered and characterized by means of transmission electron microscopy (TEM). The films were deposited on a (001) oriented Pt surface. The orientation relationship between SrTiO3 film and Pt substrate was determined, and four types of growth modes were revealed. These four growth modes formed four types of domains, respectively, and these domains and Pt formed peculiarly ordered interfacial structures, i.e., near coincidence site lattices. Antiphase boundaries between two adjacent domains were also observed by high-resolution imaging.

High Resolution Imaging of As-Grown Sapphire Surfaces

1985 ◽  
Vol 62 ◽  
Author(s):  
Tung Hsu ◽  
S. R. Nutt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Features ◽  
High Resolution Imaging ◽  
Sapphire Surface ◽  
Surface Steps ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Resolution Imaging ◽  
Surface Facets

ABSTRACTSurfaces of commercially grown edge-defined film-fed growth sapphire (EFG α-Al2O3) were studied in the electron microscope using both reflection electron microscopy (REM) and conventional transmission electron microscopy (TEM). The as-grown sapphire surface, ostensibly {1120}, was characterized by “rooftop” structures which were often locally periodic. These rooftop structures consisted of alternating {1120} facets and additional facets inclined a few degrees. The crystallography of the surface facets was analyzed using REM imaging of bulk specimens, and trace analysis of back-thinned plan section TEM specimens. Surface roughness was measured by stylus profilometry. and these measurements were compared to the electron microscopy observations. Fine structural features parallel to <0110> directions were also observed in both REM and TEM experiments, and these were attributed to surface steps of atomic scales.

scholarly journals Recent Advances in Transmission Electron Microscopy for Materials Science at the EMAT Lab of the University of Antwerp

Materials ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1304 ◽  
Author(s):  
Giulio Guzzinati ◽  
Thomas Altantzis ◽  
Maria Batuk ◽  
Annick De Backer ◽  
Gunnar Lumbeeck ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Materials Science ◽  
Electron Tomography ◽  
High Resolution Imaging ◽  
Rapid Progress ◽  
Transmission Electron ◽  
The World ◽  
Resolution Imaging ◽  
The University

The rapid progress in materials science that enables the design of materials down to the nanoscale also demands characterization techniques able to analyze the materials down to the same scale, such as transmission electron microscopy. As Belgium’s foremost electron microscopy group, among the largest in the world, EMAT is continuously contributing to the development of TEM techniques, such as high-resolution imaging, diffraction, electron tomography, and spectroscopies, with an emphasis on quantification and reproducibility, as well as employing TEM methodology at the highest level to solve real-world materials science problems. The lab’s recent contributions are presented here together with specific case studies in order to highlight the usefulness of TEM to the advancement of materials science.

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

Interfacial Structure of BaRuO3 Thin Films Grown On (111) SrTiO3

2000 ◽  
Vol 654 ◽  
Author(s):  
W. Tian ◽  
M. K. Lee ◽  
C. B. Eom ◽  
X. Q. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Intermediate Layer ◽  
Interfacial Structure ◽  
Initial Growth ◽  
Growth Modes ◽  
Transmission Electron ◽  
Quantitative Image ◽  
Film Substrate

AbstractBaRuO3 thin films were grown on (111) SrTiO3substrate by 90° off-axis rf-sputtering. Transmission electron microscopy studies revealed that the films consist of the metastable 4H hexagonal polymorph of BaRuO3 along with few defects. The films are c-axis oriented, single crystalline with the in-plane orientation relationship with respect to the SrTiO3substrate of [112 0] BaRuO3 // [110] SrTiO3. High-resolution transmission electron microscopy (HRTEM) studies of the film-substrate interface revealed the existence of a thin intermediate layer of the 9R hexagonal polymorph of BaRuO3 between the (111) SrTiO3 substrate and the 4H film. The formation mechanism for the intermediate layer is not fully understood though. Through the combination of HRTEM and quantitative image simulations, the atomic structure of the interface between the 9R intermediate layer and the underneath (111) SrTiO3 was constructed. Three initial growth modes were observed, each of them adopting the local continuity of the oxygen octahedral sublattice across the interface.

Design of an analytical TEM with integrated imaging ω spectrometer

1991 ◽  
Vol 49 ◽  
pp. 354-355
Author(s):  
J. Bihr ◽  
G. Benner ◽  
D. Krahl ◽  
A. Rilk ◽  
E. Weimer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Objective Lens ◽  
High Resolution Imaging ◽  
Lens System ◽  
Transmission Electron ◽  
Electron Energy Loss Spectrometer ◽  
Resolution Imaging ◽  
Koehler Illumination ◽  
Electron Energy Loss

Conventional transmission electron microscopy (CTEM) can be used for high resolution imaging of specimens and for the analysis of minute specimen areas. The capabilities of such an instrument are strongly improved by the integration of an imaging electron energy loss spectrometer. All imaging and diffraction techmques are provided in such an energy filtered transmission electron microscope (EFTEM).In addition to the well-known objective lens for Koehler illumination, the new Zeiss EFTEM features a projective lens system which integrates a new imaging ω-spectrometer comprising four individual magnets and one hexapole corrector Fig.l and Fig. 3 show the design of this microscope.

Characterization of APBs in GaAs Grown on Si and Ge

1987 ◽  
Vol 91 ◽  
Author(s):  
C.B. Carter ◽  
N.-H. Cho ◽  
S. Mckernan ◽  
D.K. Wagner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Relative Displacement ◽  
Atomic Resolution ◽  
Organometallic Vapor Phase Epitaxy ◽  
Image Simulation ◽  
Antiphase Boundaries ◽  
Transmission Electron ◽  
Resolution Imaging

ABSTRACTAntiphase boundaries are observed in epilayers of GaAs grown by organometallic vapor phase epitaxy on Ge substrates and are then invariably found to show a tendency to facet. Stacking-fault-like fringes caused by the translation of adjacent grains give the information on the relative displacement of the two grains at these interfaces and show that this translation does not have a fixed magnitude for a particular interface but varies with the orientation of the interface. Preferred orientations of the antiphase boundaries and the rigid-body translations have been studied using transmission electron microscopy. Interactions between antiphase boundaries and interfaces have been examined here in heterolayer structures consisting of alternating layers of GaAs and AlxGal−xAs grown on an (001) Ge substrate. The possibility of using atomic-resolution imaging to investigate the atomic structure of APBs is illustrated and the images are compared with those predicted by image simulation.

Fracture processes in polystyrene

1975 ◽  
Vol 343 (1635) ◽  
pp. 525-535 ◽  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Fracture Surface ◽  
Fracture Process ◽  
Transmission Electron ◽  
Controlled Fracture ◽  
Means Of Transmission ◽  
Surface Morphologies ◽  
Fracture Processes

The model for the craze controlled fracture process in polystyrene has been developed further by taking into consideration the micromorphology of the crazes in which the nucleation and propagation of cracks occurs. The micromorphology of crazes formed in thin films of polystyrene, some of which had fractured, has been characterized by means of transmission electron microscopy. The observed micromorphological detail has been shown to be consistent with the micromorphology of the fracture surfaces of bulk specimens. In particular, the slow and fast regions of crack propagation which result in distinctly different fracture surface morphologies have been shown to be associated with differences in micromorphology which occur along the length of a craze.

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