Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

2011 ◽  
Vol 1324 ◽  
Author(s):  
Y. Wang ◽  
P. Ruterana ◽  
L. Desplanque ◽  
S. El Kazzi ◽  
X. Wallart
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Treatment ◽  
Substrate Surface ◽  
Strain Relaxation ◽  
Dislocation Core ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Transmission Electron ◽  
Growth Initiation

ABSTRACTHigh resolution transmission electron microscopy in combination with geometric phase analysis is used to investigate the interface misfit dislocations, strain relaxation, and dislocation core behavior versus the surface treatment of the GaAs for the heteroepitaxial growth of GaSb. It is pointed out that Sb-rich growth initiation promotes the formation of a high quality network of Lomer misfit dislocations that are more efficient for strain relaxation.

A novel mosaic-like structure in SrTiO3 thin films on a Pt(001) surface revealed by transmission electron microscopy

1996 ◽  
Vol 11 (11) ◽  
pp. 2777-2784 ◽  
Author(s):  
S. Takeno ◽  
S. Nakamura ◽  
K. Abe ◽  
S. Komatsu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution Imaging ◽  
Antiphase Boundaries ◽  
Growth Modes ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Resolution Imaging ◽  
Means Of Transmission

A novel mosaic-like structure in SrTiO3 thin films was discovered and characterized by means of transmission electron microscopy (TEM). The films were deposited on a (001) oriented Pt surface. The orientation relationship between SrTiO3 film and Pt substrate was determined, and four types of growth modes were revealed. These four growth modes formed four types of domains, respectively, and these domains and Pt formed peculiarly ordered interfacial structures, i.e., near coincidence site lattices. Antiphase boundaries between two adjacent domains were also observed by high-resolution imaging.

Fracture processes in polystyrene

1975 ◽  
Vol 343 (1635) ◽  
pp. 525-535 ◽  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Fracture Surface ◽  
Fracture Process ◽  
Transmission Electron ◽  
Controlled Fracture ◽  
Means Of Transmission ◽  
Surface Morphologies ◽  
Fracture Processes

The model for the craze controlled fracture process in polystyrene has been developed further by taking into consideration the micromorphology of the crazes in which the nucleation and propagation of cracks occurs. The micromorphology of crazes formed in thin films of polystyrene, some of which had fractured, has been characterized by means of transmission electron microscopy. The observed micromorphological detail has been shown to be consistent with the micromorphology of the fracture surfaces of bulk specimens. In particular, the slow and fast regions of crack propagation which result in distinctly different fracture surface morphologies have been shown to be associated with differences in micromorphology which occur along the length of a craze.

Dislocations in SrTiO3 thin films grown on LaAlO3 substrates

2002 ◽  
Vol 17 (12) ◽  
pp. 3117-3126 ◽  
Author(s):  
Y. L. Qin ◽  
C. L. Jia ◽  
K. Urban ◽  
J. H. Hao ◽  
X. X. Xi
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Lattice Mismatch ◽  
Orthogonal Arrays ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Burgers Vector ◽  
Transmission Electron

The dislocation configurations in SrTiO3 thin films grown epitaxially on LaAlO3 (100) substrates were studied by conventional and high-resolution transmission electron microscopy. Misfit dislocations had, in most cases, a Burgers vector a〈100〉 and line directions of 〈100〉 These dislocations constitute orthogonal arrays of parallel dislocations at the interface, relieving the lattice mismatch between SrTiO3 and LaAlO3. Threading dislocations were found to be the major defects in the films. Two types of threading dislocations with the Burgers vectors a〈100〉?and a〈100〉?were identified. The relations of these threading dislocations with the misfit dislocations were investigated and are discussed in this paper.

Melt recrystallization behavior of carbon-coated melt-drawn oriented isotactic polypropylene thin films

2015 ◽  
Vol 6 (43) ◽  
pp. 7524-7532 ◽  
Author(s):  
Le Ma ◽  
Jie Zhang ◽  
Mushtaque A. Memon ◽  
Xiaoli Sun ◽  
Huihui Li ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Recrystallization Temperature ◽  
Melting Time ◽  
Recrystallization Behavior ◽  
Transmission Electron ◽  
Carbon Coated ◽  
Means Of Transmission ◽  
Temperature Melting

The melt recrystallization of vacuum carbon evaporated melt-drawn iPP thin films at varying melting temperature, melting time and recrystallization temperature was studied by means of transmission electron microscopy combined with electron diffraction.

DEFECTS OF A15 SMALL PARTICLES IN TUNGSTEN THIN FILMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1191-1194 ◽  
Author(s):  
MASASHI ARITA ◽  
ISAO NISHIDA
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Crystal Defects ◽  
Type Structure ◽  
Special Structure ◽  
Small Particles ◽  
Structure Unit ◽  
Transmission Electron ◽  
Means Of Transmission

Crystal defects of A15 small particles in tungsten thin films were studied by means of transmission electron microscopy. Defects found in nanoscale crystals were analyzed to have special structure containing the Zr4Al3-type structure unit.

TEM STUDY OF THE MICROSTRUCTURE AND INTERFACES IN YBa2Cu3Oy THIN FILMS GROWN ON SILICON WITH A Eu2CuO4/Y-ZrO2 BI-LAYER BUFFER

2007 ◽  
Vol 14 (04) ◽  
pp. 751-754
Author(s):  
J. GAO ◽  
E. G. FU ◽  
Z. LUO ◽  
Z. WANG ◽  
D. P. YU
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Oxide Layer ◽  
Intermediate Layer ◽  
Secondary Phases ◽  
Grown Layer ◽  
Initial Formation ◽  
Transmission Electron ◽  
Means Of Transmission

The microstructures in the YBa 2 Cu 3 O y films grown on Eu 2 CuO 4/ Y-ZrO 2(YSZ) buffered silicon were studied by means of transmission electron microscopy. Our effort was emphasized on the influence of the interfacial microstructures on the formation and epitaxy of the grown layer. It was found that a native Si -oxide layer ~ 5 nm was formed at the boundary between YSZ and silicon. Such an intermediate layer should be formed after the initial formation of the grown YSZ layer as the epitaxy of YSZ still remain. The epitaxy can be kept through all layers without the formation of big grain boundaries. No amorphous layers and secondary phases were observed at the interfaces of YSZ/ECO and YBCO/ECO. The results demonstrate that the crystallinity and the epitaxy of YBCO have been greatly improved by the bi-layer buffer.

Tem Investigation of Titanium Silicide Thin Films

1998 ◽  
Vol 523 ◽  
Author(s):  
A. F. Myers ◽  
E. B. Steel ◽  
L. M. Struck ◽  
H. I. Liu ◽  
J. A. Burns
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Scanning Transmission Electron Microscopy ◽  
Titanium Silicide ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
20 Nm

AbstractTitanium silicide films grown on silicon were analyzed by transmission electron microscopy (TEM), electron diffraction, scanning transmission electron microscopy (STEM), and energy dispersive x-ray spectroscopy. The films were prepared by sequential rapid thermal annealing (RTA) at 675 °C and 850 °C of 16-nm-thick sputtered Ti on Si (001) wafers. In some cases, a 20-nm-thick TiN capping layer was deposited on the Ti film before the RTA procedure and was removed after annealing. TEM and STEM analyses showed that the silicide films were less than 0.1 μm thick; the capped film was more uniform, ranging in thickness from ∼ 25 – 45 nm, while the uncapped film ranged in thickness from ∼ 15 – 75 nm. Electron diffraction was used to determine that the capped film contained C54-TiSi2, C49-TiSi2, Ti5Si3, and possibly TiSi, and that the uncapped film contained C49-TiSi2, TiSi, Ti5Si3, unreacted Ti, and possibly C54-TiSi2.

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