Microstructural characteristics of conductive SrRuO3 thin films formed by pulsed-laser deposition

1998 ◽  
Vol 13 (8) ◽  
pp. 2302-2307 ◽  
Author(s):  
P. Lu ◽  
F. Chu ◽  
Q. X. Jia ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Resolution Electron Microscopy ◽  
Laser Deposition ◽  
Structural Defects ◽  
Orientation Relationships ◽  
Coherent Interface ◽  
Transmission Electron ◽  
Resolution Electron

Transmission electron microscopy and high-resolution electron microscopy have been used to study microstructural properties of conductive SrRuO3 films grown by pulsed laser deposition on (001) LaAlO3 and (001) SrTiO3 substrates. It was found that the SrRuO3 films deposited on both substrates consist of mixed domains of [001] and [110] orientations, with orientation relationships that can be described as (i) (001)f ‖ (001)s and [110]f ‖ [100]s and (ii) (110)f ‖ (001)s and [001]f ‖ [100]s, respectively. The SrRuO3 films deposited on SrTiO3, in particular, were found to have a layered domain structure, with the [110] domain grown initially on the substate, followed by growth of the [001] oriented domain with increasing thickness. The films on SrTiO3 are strained and have a coherent interface with the substrate. The SrRuO3 films deposited on LaAlO3, on the other hand, contain a high density of structural defects such as stacking faults and microtwins on the (022) planes. Microtwins as large as 50 nm in thickness are observed in the films deposited on LaAlO3. Possible causes for the observed structural defects in the films are discussed.

Growth of TiN/AlN Superlattice by Pulsed Laser Deposition

2002 ◽  
Vol 750 ◽  
Author(s):  
H. Wang ◽  
A. Gupta ◽  
Ashutosh Tiwari ◽  
X. Zhang ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Internal Stresses ◽  
Layer By Layer ◽  
Special Configuration ◽  
Transmission Electron

ABSTRACTTiN-AlN binary-components have attracted a lot of interests in coatings of high speed cutting tools, due to their higher oxidation resistance, higher hardness, lower internal stresses and better adhesion. Especially, nanometer-scale multilayer structures of AlN/TiN show superior structural and mechanical properties due to their tremendous interface area and become one of the promising candidates for superhard coatings. Here we present a novel method to grow highly aligned TiN/AlN superlattice by pulsed laser deposition. In this method TiN and AlN targets are arranged in a special configuration that they can be ablated in sequence, giving alternate layer by layer growth of TiN(1nm)/AlN(4nm). X-ray diffraction and transmission electron microscopy (TEM) analysis showed the structure to be cubic for both TiN and AlN in the nanoscale multilayers. Microstructure and uniformity for the superlattice structure were studied by TEM and Scanning transmission electron microscopy with Z-contrast (STEM). Nanoindentation results indicated a higher hardness for this new structure than pure AlN and rule-of-mixtures value. Four point probe electrical resistivity measurements showed overall insulating behavior.

Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition

2014 ◽  
Vol 936 ◽  
pp. 282-286
Author(s):  
Ying Wen Duan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Structural Quality ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Transmission Electron

Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.

scholarly journals Scanning and Transmission Electron Microscopy Studies of Alkali Halides Films Grown by Pulsed Laser Deposition

2013 ◽  
Vol 19 (S2) ◽  
pp. 1588-1589
Author(s):  
D.R. Acosta ◽  
E. Mejia ◽  
C. Sanchez ◽  
J. Martinez ◽  
C. Magana
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Alkali Halides ◽  
Laser Deposition ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

1995 ◽  
Vol 410 ◽  
Author(s):  
J. E. Cosgrove ◽  
P. A. Rosenthal ◽  
D. Hamblen ◽  
D. B. Fenner ◽  
C. Yang
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Auger Microprobe ◽  
Substrate Types

ABSTRACTWe have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

Ion-Assisted Pulsed Laser Deposition of BN Films

1995 ◽  
Vol 388 ◽  
Author(s):  
G. L. Doll ◽  
D. C. Chance ◽  
L. Salamanca-Riba
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Auger Electron ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Nitrogen Ion ◽  
Boron Nitride Films

AbstractBoron nitride films grown by ion-assisted pulsed laser deposition have been characterized by infrared absorption, auger electron pectroscopy, and transmission electron microscopy. Elemental bonding and the crystallinity of BN films grown in three nitrogen ion energy regimes:high (2500 eV), low (700 eV), and without ions (0 eV) are examined, and the results interpreted within the framework of a compressive stress mechanism for cBN film growth.

Hrtem of the Cu/Mno Interface in an Internally Oxidized Cumn Alloy

1990 ◽  
Vol 183 ◽  
Author(s):  
F. Ernst
Keyword(s):  
Electron Microscopy ◽  
Lattice Mismatch ◽  
Particle Morphology ◽  
High Resolution Electron Microscopy ◽  
Orientation Relationships ◽  
Coherent Interface ◽  
Resolution Electron ◽  
Characteristic Particle ◽  
Interface Structures ◽  
The Relationship

AbstractThe structure of the Cu/MnO interface has been studied using high resolution electron microscopy (HRTEM). Interfaces were formed by internal oxidation of a CuMn alloy. In the course of the reaction, MnO particles precipitate in several special orientations relative to the Cu lattice: “parallel” topotaxy, “twin” topotaxy, and a 55°[110] rotation yielding (111)Cu∥(002)MnO. Each of the three Cu/MnO orientation relationships has a characteristic particle morphology reflecting thermodynamically favourable interface structures. In parallel topotaxy MnO particles preferentially form flat {111}Cu/{111} MnO interfaces with a lattice mismatch of 21%. Although this mismatch is large, the existence of coherence strains in the Cu cannot be excluded. MnO particles in the 55°[110] orientation form regions of semi-coherent Interface where {200}MnO planes face a set of parallel {111} Cu planes with a mismatch of only 6%. This interface variant exhibits equally spaced steps, every 16 to 18 Cu {111} planes. Parallel to every step there is a misfit dislocation in the Cu at a stand-off distance of about 2 Cu {111} spacings. The relationship between structure and energy of the Cu/MnO interface is discussed.

Defect Structures in Al-Ni-Rh Crystalline Approximants Studied by HREM and HAADF Techniques

2007 ◽  
Vol 561-565 ◽  
pp. 1353-1356 ◽  
Author(s):  
Wei Sun ◽  
Y.H. Chen ◽  
J.P. Wang ◽  
Z. Zhang
Keyword(s):  
Electron Microscopy ◽  
Structural Characteristics ◽  
Symmetry Plane ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Structural Defects ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Scanning Transmission ◽  
Annular Dark Field

By means of a combination of high-resolution electron microscopy (HREM) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) techniques, we have directly revealed that periodic arrangements in different manners for flattened hexagons constructed with atom columnar clusters can form two Al-Ni-Rh crystalline approximant phases. In contrast to periodic arrangements of flattened hexagons, configurations and distributions of various defects in these structurally-complicated alloy phases have been examined and their structural characteristics discussed. HREM observations clearly show that structural defects in Al-Ni-Rh crystalline approximants are of phason type and they are correlated with incorrect arrangements of atom columnar clusters. The distribution of high density planar defects can destroy the long-range periodicity in at least one direction in the pseudo decagonal symmetry plane. By means of the HAADF-STEM imaging technique, the existence of ill-formed atom columnar clusters in the core area of a linear defect, which is usually not visible in HREM observations, has been clearly revealed.

Sign in / Sign up

Export Citation Format

Share Document