Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

1995 ◽  
Vol 410 ◽  
Author(s):  
J. E. Cosgrove ◽  
P. A. Rosenthal ◽  
D. Hamblen ◽  
D. B. Fenner ◽  
C. Yang
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Auger Microprobe ◽  
Substrate Types

ABSTRACTWe have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

Growth of Epitaxial Cu/TiN/6H-SiC(0001) Heterostructures by Pulsed Laser Deposition

1999 ◽  
Vol 580 ◽  
Author(s):  
A. Kvit ◽  
A.K. Sharma ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron Micrograph ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron

AbstractEpitaxial Cu/TiN heterostructures were grown on hexagonal (6H)-SiC(0001) substrate by pulsed laser deposition using the domain epitaxy, where integral multiple of lattice constant or major planes match across the interface1. Such layers are needed for metallization of SiC bond integrated circuit devices. These Cu and TiN layers on SiC(0001) were grown at 600 degrees centigrade in a high vacuum (<10−6 Torr). This structure was characterized using X-ray diffraction technique and transmission electron microscopy. The X-ray diffraction recorded only (111) and (222) reflection of Cu and TiN. The full-width at half maximum of ω-rocking curve of (111) reflection of Cu (0.4 degree) and TEM results indicated a high epitaxial quality. The plan view transmission electron micrograph shows that Cu forms three-dimensional islands indicating that the Cu/TiN interface energy is very high. The island size varies from 0.2 to 2 μm. Analysis of selective aperture diffraction patterns and cross-sectional transmission electron microscopy, including high-resolution imaging, showed relationships Cu(111)//TiN(111)//6H-SiC(0001). The TiN/SiC an interface was locally atomically sharp and free from secondary phases or obvious interdiffusion. The typical defects in the TiN(111) layers consisted of threading domain boundaries. The mechanism of three-dimension growth of copper on TiN layers was discussed.

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition

2014 ◽  
Vol 936 ◽  
pp. 282-286
Author(s):  
Ying Wen Duan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Structural Quality ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Transmission Electron

Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

scholarly journals Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 61 ◽  
Author(s):  
Sondes Bauer ◽  
Adriana Rodrigues ◽  
Lukáš Horák ◽  
Xiaowei Jin ◽  
Reinhard Schneider ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

Structural quality of LuFeO 3 epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO 3 during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO 3 growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO 3 lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO 3 was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO 3 by reducing the misfit of the LuFeO 3 lattice with respect to the material underneath.

Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2467-2470 ◽  
Author(s):  
J. C. Caylor ◽  
M. S. Sander ◽  
A. M. Stacy ◽  
J. S. Harper ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Zinc Blende Structure

Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)CoSb3 ∥ (001)InSb; [100]CoSb3 ∥ [110]InSb.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

Growth of TiN/AlN Superlattice by Pulsed Laser Deposition

2002 ◽  
Vol 750 ◽  
Author(s):  
H. Wang ◽  
A. Gupta ◽  
Ashutosh Tiwari ◽  
X. Zhang ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Internal Stresses ◽  
Layer By Layer ◽  
Special Configuration ◽  
Transmission Electron

ABSTRACTTiN-AlN binary-components have attracted a lot of interests in coatings of high speed cutting tools, due to their higher oxidation resistance, higher hardness, lower internal stresses and better adhesion. Especially, nanometer-scale multilayer structures of AlN/TiN show superior structural and mechanical properties due to their tremendous interface area and become one of the promising candidates for superhard coatings. Here we present a novel method to grow highly aligned TiN/AlN superlattice by pulsed laser deposition. In this method TiN and AlN targets are arranged in a special configuration that they can be ablated in sequence, giving alternate layer by layer growth of TiN(1nm)/AlN(4nm). X-ray diffraction and transmission electron microscopy (TEM) analysis showed the structure to be cubic for both TiN and AlN in the nanoscale multilayers. Microstructure and uniformity for the superlattice structure were studied by TEM and Scanning transmission electron microscopy with Z-contrast (STEM). Nanoindentation results indicated a higher hardness for this new structure than pure AlN and rule-of-mixtures value. Four point probe electrical resistivity measurements showed overall insulating behavior.

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