Effect of oxygen partial pressure on texture development in lead zirconate titanate thin films processed from metalorganic precursors

1999 ◽  
Vol 14 (12) ◽  
pp. 4615-4620
Author(s):  
Jarrod L. Norton ◽  
Gerald L. Liedl ◽  
Elliott B. Slamovich
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Texture Development ◽  
Pure Oxygen ◽  
Maximum Temperature ◽  
Zirconate Titanate ◽  
Liquid Precursors ◽  
Pzt Films ◽  
Switching Temperature

Metalorganic liquid precursors were used to examine the effects of processing atmosphere on texture development in oriented Pb(Zr0.60Ti0.40)O3 thin films. After removal of organic ligands via pyrolysis, the films were heated at 25 °C/min in a 5% H2/Ar atmosphere until a switching temperature, after which the atmosphere was switched to pure oxygen. The films were heated to a maximum temperature of 650 °C with switching temperatures ranging from 450 to 600 °C. The degree of (111) orientation in the lead zirconate titanate (PZT) films increased with increasing switching temperature, resulting in highly textured (111) PZT films. These results suggest that atmosphere control plays a significant role in texture development during rapid thermal processing.

Physicochemical and Electrical Properties of RF Magnetron Sputtered Lead Zirconate Titanate Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
B. Ea Kim ◽  
M.C. Hugon ◽  
F. Varniere ◽  
B. Agius ◽  
H. Achard ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Lead Zirconate Titanate ◽  
Deuteron Beam ◽  
Lead Zirconate ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Pzt Thin Films ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTDue to their high dielectric constant, good chemical stability and good insulating properties, lead zirconate titanate (PZT) thin films are considered as promising materials to replace Si3N4 and Ta2O5 for use as the capacitor dielectric in future high density DRAMs. Moreover, the ferroelectric quality of PZT films also allows use of this material in non volatile memories. In this paper, we investigate the properties of PZT films deposited from an oxide target of nominal composition {Pb1.1(Zr0.55,Ti0.45)O3} in a radio frequency (rf) magnetron sputtering system. The Pt(deposited at 450°C)/[TiN/Ti/BPSG/Si] structure annealed at 450°C at 10−6 mbar (Pt(450°C)/{TiN/Ti/BPSG/Si}450°c,10–6mbar) was used as a substrate material in this work. The PZT films were deposited at different pressures, and different substrate temperatures ranging from floating temperature to 400°C; the thicknesses of the sputtered films were in the 15–720 nm range. The kinetics of the sputtering process and the effect of sputtering parameters on film composition have been studied and related to the continuously monitored optical emission of the plasma. The relative cation and oxygen compositions of the films were determined by a new method based on the simultaneous use of Rutherford Backscattering Spectrometry (RBS) and Nuclear Reaction Analysis (NRA) induced by a deuteron beam. The conditions for the deposition of stoichiometric PZT thin films were established.Electrical characterizations of the PZT films including resistivity, dielectric constant, dissipation factor were studied as a function of the temperature. From initial electrical measurements, it appears that a dielectric constant of 740 can be obtained for PZT 55/45 films deposited on a previously annealed Pt/TiN/Ti/BPSG/Si structure.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Early Stages of Crystallization of Sol−Gel-Derived Lead Zirconate Titanate Thin Films

2003 ◽  
Vol 15 (5) ◽  
pp. 1147-1155 ◽  
Author(s):  
A. Wu ◽  
P. M. Vilarinho ◽  
I. Reaney ◽  
I. M. Miranda Salvado
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Early Stages ◽  
Zirconate Titanate

scholarly journals Interfacial mechanisms controlling phase formation in sol-gel derived lead zirconate titanate thin films

1994 ◽  
Vol 17 (6) ◽  
pp. 1005-1014 ◽  
Author(s):  
S B Majumder ◽  
V N Kulkarni ◽  
Y N Mohapatra ◽  
D C Agrawal
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate
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